Large-scale preparation method for stably-doped large-area graphene transparent conductive films

A transparent conductive film and graphene technology, which is applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc., can solve the interaction and high-efficiency doping environment that is not conducive to large-scale graphene large-scale doping processing, limiting electron transfer, etc. Poor stability and other issues, to achieve the effect of promoting electron transfer and interaction, simple and controllable process, and improving conductivity

Active Publication Date: 2015-03-11
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
View PDF7 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a contradiction between doping effect and stability in existing doping methods: that is, stable doping usually has a weak doping effect, while efficient doping has poor environmental stability
One of the reasons for the above problems is that at present, the transferred CVD graphene film is mainly doped: the residual impurities caused by the transfer will pollute the interface between graphene and dopant, and the dopant cannot interact with the intrinsic surface of graphene. Effective contact is formed, limiting interactions such as electron transfer between the two
Moreover, the dopant is usually located on the outer layer of the graphene film and is directly exposed to the external environment, which is prone to performance degradation
In addition, the dielectric coating and removal steps required to transfer graphene alone both increase the cost and reduce the transfer efficiency, and the method of transfer first and then doping makes the preparation process cumbersome, which is not conducive to the scale-up of large-area graphene. Doping

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-scale preparation method for stably-doped large-area graphene transparent conductive films
  • Large-scale preparation method for stably-doped large-area graphene transparent conductive films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Metal copper foil is used as the initial matrix, molybdenum oxide is used as the dopant, polyethylene terephthalate film is used as the target matrix, and the method of thermal compression bonding is adopted. Use CVD method to grow graphene on metal copper foil (in this embodiment, metal copper foil can be replaced with copper sheets or copper plates of different specifications, single crystal or polycrystalline, thickness greater than 10 μm, this embodiment is 25 μm). After the copper foil grown with graphene is cooled, a molybdenum oxide film with a thickness of 3 nm is formed on the surface of the graphene / copper foil by evaporation coating. This thin film was treated in an argon atmosphere at 300° C. for 1 hour. Graphene, molybdenum oxide and polyethylene terephthalate film grown on the copper foil are directly pressed together by the method of roll-to-roll hot roll pressing (or hot plate pressing), and the pressure is less than 2MPa (this embodiment) 1MPa), the ho...

Embodiment 2

[0038] The difference from Example 1 is:

[0039] Electrostatic force is used as binding force. Utilize electrostatic generator to generate electrostatic force (the voltage that produces static electricity is not less than 0.1kV, the present embodiment is 15kV) at " molybdenum oxide / graphene / copper foil " (or on the surface of polyethylene terephthalate film), The "molybdenum oxide / graphene / copper foil" and the polyethylene terephthalate film are pressed together by electrostatic force (pressure less than 1MPa, 0.1MPa in this embodiment) by rolling or plate pressing, A "polyethylene terephthalate / molybdenum oxide / graphene / copper foil" composite material is formed.

[0040] In this embodiment, the electrolyte is 8 mol / L NaOH aqueous solution, the operating temperature of the electrolysis process is 35-40° C., the voltage used in the electrolysis process is 45-50 volts, the current is 7 amperes, and the gas generated by the electrolysis is hydrogen.

[0041] In the present emb...

Embodiment 3

[0043] The difference from Example 1 is:

[0044] Different initial matrix materials are used. In this embodiment, the metal copper foil can be replaced with metals such as nickel, cobalt, molybdenum and alloys thereof (copper-nickel alloy, molybdenum-nickel alloy, gold-nickel alloy, etc.) or a metal film stably combined on a silicon chip, and Titanium carbide, molybdenum carbide, tungsten carbide and other metal carbides, or other semiconductors such as Si) are used as the initial substrate, and single-layer or multi-layer graphene is grown on the surface by different methods.

[0045] In this embodiment, the electrolyte is 3 mol / L NaOH aqueous solution, the operating temperature of the electrolysis process is 20-30°C, the voltage used in the electrolysis process is 10-12 volts, and the current is 4 amperes; the gas generated by the electrolysis is hydrogen.

[0046] In the present embodiment, the performance of the doped graphene transparent conductive film is as follows: t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation technology for graphene transparent conductive films, in particular to a large-scale preparation method for stably-doped large-area graphene transparent conductive films. According to the method, the doping effect and stability of the graphene transparent conductive films are improved through a sandwich structure, and a doping agent is in direct contact with the intrinsic surface of graphene and positioned between the graphene and a transparent substrate. The method comprises the following steps: firstly, forming the doping agent on the surface of the graphene or the transparent substrate on an initial substrate; secondly, combining the graphene, the doping agent and the transparent substrate; finally, separating the graphene from the initial substrate so as to prepare the stably-doped large-area graphene transparent conductive films. The graphene serves as an outer-layer protection film of the doping agent, so that the doping stability can be improved; the intrinsic surface of the graphene is in direct contact with the doping agent, so that the pollution of an interface between the graphene and the doping agent by impurities can be avoided, the doping effect of the doping agent can be improved, and the conductivity of the film can be enhanced; the transferring and doping processes of the graphene are combined, so that the large-scale preparation can be easily realized.

Description

Technical field: [0001] The invention relates to a preparation technology of a graphene transparent conductive film, in particular to a large-scale preparation method of a stably doped large-area graphene transparent conductive film. Background technique: [0002] Transparent conductive film is an important optoelectronic material, which is widely used in optoelectronic fields such as touch screens, liquid crystal displays, organic light-emitting diode displays (OLEDs), and solar cells. The continuous development and upgrading of electronic information products and technologies have put forward higher requirements for the development of transparent conductive films such as flexibility, ultra-thinness, and high stability. Indium tin oxide (ITO) is the transparent conductive film with the best comprehensive performance at present, but ITO has many problems such as resource shortage, high cost, poor flexibility and chemical stability, and cannot meet the requirements of new tra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00
Inventor 任文才马来鹏成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap