Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof

A high electron mobility, non-polar technology, applied in the field of microelectronics, can solve problems affecting device stability, reliability hazards, material and device damage, etc., to suppress the generation of high-density polarized charges and improve process repetition Performance and stability, guaranteed performance and reliability
CN109545852AActive Publication Date: 2019-03-29XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2019-03-29

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Abstract

The invention relates to a non-polar InAlN / GaN high electron mobility transistor and a preparation method thereof. The preparation method includes the following steps: S1. selecting a non-polar GaN material as a substrate; S2. growing GaN on the substrate to form a non-polar channel layer; S3. growing InAlN on the non-polar channel layer to form a non-polar barrier layer; and S4. making a source electrode and a drain electrode in the non-polar channel layer and the non-polar barrier layer, making a grid electrode on the non-polar barrier layer, and obtaining the non-polar InAlN / GaN high electron mobility transistor. According to the preparation method of the non-polar InAlN / GaN high electron mobility transistor of the embodiments of the invention, under certain process conditions, the non-polar channel layer and barrier layer are formed, the non-polar channel layer and the non-polar barrier layer form a non-polar heterostructure, the non-polar heterostructure can perform modulation onspontaneous polarization and piezoelectric polarization, thereby suppressing generation of high-density polarization charges in the channel, and an enhanced effect is achieved.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nonpolar InAlN / GaN high electron mobility transistor and a preparation method thereof. Background technique

[0002] Due to the existence of high-mobility two-dimensional electron gas in the channel of GaN-based heterostructures, GaN has become the most ideal material for the preparation of high-performance electronic devices. Since K.Han et al. first proposed the concept of GaN-based heterostructures, heterostructures represented by AlGaN / GaN, InAlN / GaN, AlN / GaN, etc. have achieved fruitful results in the preparation of high electron mobility transistors. Research results. Up to now, the cut-off frequency of High Electron Mobility Transistor (HEMT) based on the conventional AlGaN / GaN heterostructure has exceeded 200GHz, and the maximum oscillation frequency has also exceeded 300GHz.

[0003] Transistor devices based on conventional polar c-plane III-nitr...

Claims

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