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Preparation method of epitaxial high-conductivity BFCO photoelectric solid solution film and epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using same

A high-conductivity, thin-film technology, applied in the field of law, can solve problems such as less research, achieve the effect of high degree of epitaxy, meet research and development needs, and good semiconductor performance

Active Publication Date: 2019-12-20
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently for BiFeO 3 The research hotspot is how to improve its ferroelectricity, and there are few studies on how to improve its semiconductor transport characteristics on the basis of maintaining its ferroelectricity

Method used

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  • Preparation method of epitaxial high-conductivity BFCO photoelectric solid solution film and epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using same
  • Preparation method of epitaxial high-conductivity BFCO photoelectric solid solution film and epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using same
  • Preparation method of epitaxial high-conductivity BFCO photoelectric solid solution film and epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] High conductance BiFe 0.7 co 0.3 o 3-δ The preparation of photoelectric solid solution epitaxy thin film, the steps are as follows:

[0033] 1. Configuration of precursor solution

[0034] Bi(NO 3 ) 3 ∙5H 2 O solid powder was added to glacial acetic acid (CH 3 COOH) (Bi: glacial acetic acid molar ratio is 1:8), continuously stirred on a magnetic stirrer for 8 h, and kept the temperature at 50 °C until the solution was a transparent solution, Fe(NO 3 ) 3 ∙9H 2 O was added to the above solution, and the stirring was continued on a magnetic stirrer until the Fe(NO 3 ) 3 ∙9H 2 O is completely dissolved, and then Co(NO 3 ) 2 ∙6H 2 O was added to the solution, keeping the temperature at 50 °C, and stirred until completely dissolved. Then add polyethylene glycol 20000, polyethylene glycol 400 and acetylacetone according to the molar ratio of bismuth iron cobaltate: polyethylene glycol 20000: polyethylene glycol 400: acetylacetone=1: 0.01%: 0.01%: 1, Finally add...

Embodiment 2

[0042] High conductance BiFe 0.7 co 0.3 o 3-δ The preparation of photoelectric solid solution epitaxy thin film, the steps are as follows:

[0043] 1. Configuration of precursor solution

[0044] With embodiment 1.

[0045] 2. Coating machine throwing film

[0046] (100) Nb:SrTiO 3 The substrate is placed in a tube furnace at 700 o C under heat treatment for 30 minutes, then keep the temperature at 80 o C and put it into a homogenizer, keep the humidity range at 11-15%, then apply the precursor solution on the substrate, and prepare a single-layer film by spin coating; wherein, the first layer of film is thrown at a speed of 7000rpm , the time is 2 minutes, and the film thickness is about 10-14 nm; the second-third film is spun at a speed of 5000rpm, the time is 1 minute, the film thickness is about 16-21 nm, and the other layers are spun at a speed of 6000rpm film, the time is 1 minute, and the film thickness is guaranteed to be around 12-17 nm;

[0047] 3. Heat trea...

Embodiment 3

[0052] High conductance BiFe 0.7 co 0.3 o 3-δ The preparation of photoelectric solid solution epitaxy thin film, the steps are as follows:

[0053] 1. Configuration of precursor solution

[0054] With embodiment 1.

[0055] 2. Coating machine throwing film

[0056] (100) Nb:SrTiO 3 The substrate is placed in a tube furnace at 700 o C under heat treatment for 30 minutes, then keep the temperature at 80 o C and put it into a homogenizer, keep the humidity range at 11-15%, then apply the precursor solution on the substrate, and prepare a single-layer film by spin coating; wherein, the first layer of film is thrown at a speed of 6000rpm , the time is 2 minutes, and the film thickness is about 13-15 nm; the second-third film is spun at a speed of 4000rpm, the time is 1 minute, and the film thickness is about 18-25nm, and the other layers are spun at a speed of 5000rpm , the time is 1 minute, and the film thickness is guaranteed to be around 15-20;

[0057] 3. Heat treatment ...

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Abstract

The invention discloses a preparation method of an epitaxial high-conductivity BFCO photoelectric solid solution film and the epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using the same. The method comprises the following steps that a precursor solution is prepared, and a film is prepared on a substrate by adopting a layer-by-layer annealing process, wherein the temperature during preparation of each film is 70-90 DEG C, the humidity during film throwing is 11-15%, and the annealing atmosphere is nitrogen. According to the preparation method of the epitaxial high-conductivity BFCO photoelectric solid solution film and the epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using the same, the requirement on experimental equipmentis not too high, the raw material stoichiometric ratio is accurately controlled, the process is simple and convenient to operate, and the obtained film has high conductivity and good ferroelectric property, thereby having good application prospects in the fields of ferroelectric regulation and control logic devices and resistive memories.

Description

technical field [0001] The invention relates to a high-quality epitaxial growth of high-conductivity BFCO (BiFe 0.7 co 0.3 o 3-δ ) photoelectric solid solution thin film method, specifically related to a polymer-assisted preparation of high-quality epitaxial growth of high-conductivity BiFe 0.7 co 0.3 o 3-δ Photoelectric solid solution thin film method and obtained BiFe 0.7 co 0.3 o 3-δ Photoelectric solid solution thin film products. Background technique [0002] The ferroelectric photovoltaic effect has attracted extensive attention due to its potential applications in energy conversion, optoelectronics, information storage, etc. Compared with the photovoltaic effect of conventional p-n junction interface solar cells, a special property of ferroelectric perovskite oxides is that their noncentrosymmetric structure provides a unique way to spontaneously separate charge carriers (i.e., bulk photovoltaic effect), Extremely large open-circuit voltages with superband ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87
CPCC04B41/87C04B41/009C04B41/5036C04B35/47C04B41/455C04B41/4535C04B41/0072C04B41/4525
Inventor 杨锋刘芬林延凌季凤岐
Owner UNIV OF JINAN
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