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N polarity surface high-frequency GaN rectifier epitaxial structure on silicon substrate and preparation method thereof

An epitaxial structure, polar surface technology, applied in semiconductor/solid-state device manufacturing, diodes, semiconductor devices, etc. The problems such as the difficulty of mass junction growth, etc., can increase the two-dimensional electron gas threshold, reduce the two-dimensional electron gas threshold, and inhibit the melting back etching reaction.

Active Publication Date: 2018-05-08
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the traditional GaN rectifier epitaxial structure, the device’s two-dimensional electron threshold is not strong, the material’s internal polarization electric field is affected, the growth of high-quality AlGaN / GaN heterojunction is difficult, and it is difficult to prepare enhanced devices. GaN rectifiers are limited in high frequency. Development and application of energy transfer

Method used

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  • N polarity surface high-frequency GaN rectifier epitaxial structure on silicon substrate and preparation method thereof
  • N polarity surface high-frequency GaN rectifier epitaxial structure on silicon substrate and preparation method thereof
  • N polarity surface high-frequency GaN rectifier epitaxial structure on silicon substrate and preparation method thereof

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Embodiment 1

[0033] Such as figure 1As shown, the epitaxial structure of the N-polar plane high-frequency GaN rectifier on the silicon substrate of this embodiment includes the non-doped N-polar plane GaN buffer layer (including the N-polar plane GaN buffer layer) grown sequentially on the silicon substrate 1. The layer includes the non-doped N polar surface AlN buffer layer 2 and the non-doped N polar surface composition graded Al y Ga 1-y N buffer layer 3), carbon doped N polar GaN layer 4, non-doped N polar surface Al x Ga 1-x N layer 5, non-doped N-polar surface AlN insertion layer 6, non-doped N-polar surface GaN layer 7, N-polar InGaN layer 8; where x=0.3, y=0.15˜0.45.

[0034] The non-doped N-polar surface GaN buffer layer of this embodiment is 750nm, wherein the thickness of the non-doped N-polar surface AlN buffer layer is 150nm, and the non-doped N-polar surface composition is graded Al y Ga 1-y N (from bottom to top y=0.35, 0.18) buffer layer thickness is 650nm; the carbon-...

Embodiment 2

[0047] The preparation method of the high-frequency GaN rectifier epitaxial structure on the N-polar plane on the silicon substrate of this embodiment is as follows:

[0048] (1) Selection of the substrate and its crystal orientation: a single crystal silicon substrate is used, and the Si(111) close-packed surface is used as the epitaxial surface. The direction is used as the epitaxial growth direction of the material;

[0049] (2) Substrate surface cleaning: Put the silicon substrate into acetone, absolute ethanol, and deionized water in sequence, and ultrasonically clean it for 5 minutes in sequence. After taking it out, rinse it with deionized water and dry it with hot high-purity nitrogen;

[0050] (3) Epitaxial growth of the AlN buffer layer on the non-doped N polar surface: using the pulsed laser deposition process, put the clean substrate into the vacuum chamber, raise the substrate temperature to 420°C, and pump the vacuum in the chamber to 2.0× 10 -4 torr, the lase...

Embodiment 3

[0060] (1) Selection of the substrate and its crystal orientation: a single crystal silicon substrate is used, and the Si(111) close-packed surface is used as the epitaxial surface. The direction is used as the epitaxial growth direction of the material;

[0061] (2) Substrate surface cleaning: Put the silicon substrate into acetone, absolute ethanol, and deionized water in sequence, and ultrasonically clean it for 15 minutes in sequence. After taking it out, rinse it with deionized water and dry it with hot high-purity nitrogen;

[0062] (3) Epitaxial growth of the AlN buffer layer on the non-doped N polar surface: using the pulsed laser deposition process, put the clean substrate into the vacuum chamber, raise the substrate temperature to 500°C, and pump the vacuum to 4.0× 10 -4 torr, the laser energy is 320mJ, the laser frequency is 0Hz, the nitrogen flow rate is 10sccm, and the N-polar AlN film is grown under N-rich conditions, and the Al source is AlN high-purity cerami...

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Abstract

The invention discloses an N polarity surface high-frequency GaN rectifier epitaxial structure on a silicon substrate. The N polarity surface high-frequency GaN rectifier epitaxial structure comprisesa non-doped N polarity surface GaN buffer layer, a carbon-doped N polarity GaN layer, a non-doped N polarity surface Al<x>Ga<1-x>N layer, a non-doped N polarity surface AlN interposed layer, a non-doped N polarity surface GaN layer, and an N polarity InGaN layer growing on the silicon substrate in sequence, wherein x=0.3-0.8. The invention also discloses a preparation method of the above N polarity surface high-frequency GaN rectifier epitaxial structure on the silicon substrate. According to the N polarity surface high-frequency GaN rectifier epitaxial structure on the silicon substrate andthe method, the Al<x>Ga<1-x>N / GaN heterojunction interface quality can be improved, the high-frequency performance of a GaN rectifier prepared later can be effectively enhanced, and the preparation difficulty of enhanced devices can be effectively reduced.

Description

technical field [0001] The invention relates to a GaN rectifier, in particular to an epitaxial structure of a high-frequency GaN rectifier on an N-polar surface on a silicon substrate and a preparation method thereof. Background technique [0002] Group III nitride materials represented by GaN are hot materials for a new generation of high-frequency rectifiers. Due to their wide band gap, excellent electrical and thermal conductivity, high critical breakdown electric field, high limit operating temperature and other excellent material properties, It is regarded as the most likely strategic material to realize the miniaturization and integration of rectifier devices. However, due to the traditional GaN rectifier epitaxial structure, the device’s two-dimensional electron threshold is not strong, the material’s internal polarization electric field is affected, the growth of high-quality AlGaN / GaN heterojunction is difficult, and it is difficult to prepare enhanced devices. GaN ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/04H01L29/06H01L29/861H01L21/329
CPCH01L29/045H01L29/0684H01L29/66219H01L29/8613
Inventor 王文樑李国强李筱婵李媛
Owner SOUTH CHINA UNIV OF TECH
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