A kind of enhanced gan HEMT device and preparation method thereof

Abstract

The present invention discloses an enhanced GaN HEMT device and a preparation method thereof. The enhanced GaN HEMT device comprises a substrate and an HEMT heterogeneous structure arranged on the substrate, the top layer of the heterogeneous structure is a thin AlGaN barrier layer; a drain electrode, a source electrode and a gate electrode are arranged at the upper portion of the thin AlGaN barrier layer; dielectric layers are arranged between the gate electrode and the source electrode and between the gate electrode and the drain electrode at the upper portion of the thin AlGaN barrier layerand configured to improve the two-dimensional electron gas concentration of a channel; and the thin AlGaN barrier layer is in Ohmic contact with the drain electrode and the source electrode, and is in Schottky contact with the gate electrode. The thin AlGaN barrier layer is employed to allow the channel of the gate electrode region of the HEMT device to be in an exhaust cutoff state, the two-dimensional electron gas concentration of the channel is improved through regulation and control of the dielectric layers at the regions between the gate electrode and the drain electrode and between thegate electrode and the source electrode, and therefore, the enhanced device with small on resistance is achieved.

Description

technical field [0001] The invention relates to a GaN HEMT device and a preparation method thereof. Background technique [0002] Gallium Nitride (GaN), as the most representative third-generation wide-bandgap semiconductor material, has broad application prospects in the fields of radio frequency microwave and power electronics due to its excellent physical and chemical properties. Due to the dual effects of spontaneous polarization and piezoelectric polarization, a high-concentration two-dimensional electron gas (2DEG) can be formed in the quantum well of the AlGaN / GaN heterojunction structure, with high mobility and high saturation drift velocity. Therefore, high electron mobility transistors (HEMTs) based on AlGaN / GaN heterojunctions have excellent performance and have attracted widespread attention in the industry. [0003] Usually, 2DEG will be formed at the same time as the heterojunction is formed, so the HEMT based on this structure is a depletion device. However,...

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Problems solved by technology

However, the above methods are often easy to cause material damage, and the etching uniformity is difficult to control, resulting in problems such as high device on-resistance, poor stability and uneven threshold voltage distribution.

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