p-GaN gate enhanced GaN-HEMT device capable of reducing gate electric leakage and manufacturing method thereof

Abstract

The invention discloses a p-GaN gate enhanced GaN-HEMT device capable of reducing gate electric leakage and a manufacturing method thereof. The p-GaN gate enhanced GaN-HEMT device comprises a substrate, a GaN buffer layer and an AlGaN barrier layer which are sequentially arranged from bottom to top, and a gate structure composed of an AlN high barrier layer, a p-GaN layer and a gate is arranged on the AlGaN barrier layer; a source electrode and a drain electrode are arranged on the AlGN barrier layer on the two sides of the gate structure; passivation layers are arranged on the AlGN barrier layer between the grid electrode and the source electrode and between the grid electrode and the drain electrode; and a p-i-n junction barrier of p-GaN / AlN / AlGaN / GaN is formed below the gate metal to deplete the two-dimensional electron gas at the channel below the gate, so the device is in a turn-off state under zero gate voltage. The AlN high-barrier layer of 1-2 nm is inserted between the p-GaN channel layer and the AlGaN channel layer, and the AlN high-barrier layer has lower electron affinity and higher forbidden bandwidth, so channel electrons can be prevented from being transported to the p-GaN layer, and holes of the p-GaN layer can be prevented from being injected into the channel, so the gate current in normal work is reduced, and the safety and reliability of the enhanced GaN-HEMT device can be improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to enhanced GaN-HEMT materials, in particular to a p-GaN gate enhanced GaN-HEMT device with reduced gate leakage and a manufacturing method thereof. Background technique [0002] Due to its outstanding advantages such as wide band gap, high saturation drift speed, and high thermal conductivity, GaN materials greatly improve the withstand voltage capacity, operating frequency, and current density of power devices, and greatly reduce conduction losses. GaN power devices are capable of high-power operation and high-temperature conditions, and are the core devices in modern power conversion systems. [0003] GaN devices need to implement an enhanced working mode before they can be used in power circuits. However, the AlGaN / GaN heterojunction interface has a high concentration of two-dimensional electron gas (2DEG), and the traditional Schottky gate GaN-HEMT device is a depletion ...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a new type of p-GaN enhanced GaN-HEMT device for the problem of device application limitation and gate degradation caused by excessive gate current in the traditional p-GaN gate enhanced GaN-HEMT device structure. A thin AlN high barrier layer is inserted between the p-GaN layer and the AlGaN barrier layer to reduce the gate current during normal operation, improve the safety gate voltage swing of the device, avoid gate degradation, and improve gate reliability

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