A frd chip with built-in current sensing function

Abstract

The invention discloses a FRD chip with a self-contained current sensing function, including a chip, the edge of the chip is an IGBT terminal protection area, the middle part of the chip includes a PIN unit area and a current sensing area, and the chip The anode of the FRD chip and the positive pole of the current sensor are respectively arranged on the front side, and the two are separated by etching the metallization layer on the chip surface. The anode of the FRD chip is located in the PIN unit area, and the positive pole of the current sensor is located in the current sensing area. In the area, the negative electrode of the FRD chip is arranged on the back of the chip, and the negative electrode of the current sensor in the current sensing area is the same electrode. The FRD chip with its own current sensing function in the present invention has a simpler and more compact structure, and can accurately monitor and obtain current information when the chip is working, so as to achieve better protection for the internal chip of the module, further improve the life and reliability of the module, and at the same time It is also possible to reduce the volume of the module.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of power semiconductor devices, in particular to an FRD chip with a built-in current sensing function. Background technique [0002] With the rapid development of power electronics technology, the application of semiconductor diodes in power electronics is becoming more and more diverse. In many applications, fast switching diodes and switching devices (such as IGBT, MOSFET, MCT, etc.) are required to be connected in antiparallel In order to provide a freewheeling channel, many fast recovery diodes (Fast Recovery Diode, FRD) with different structures appear in the high voltage range, such as PIN diodes. PIN diodes are heavily doped n+ type and p+ type semiconductors on both sides, and resistors in the middle High-efficiency n-semiconductor layer, fast recovery diodes have the advantages of short reverse recovery time, good switching characteristics, and large operating current, and ...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a FRD chip with a built-in current sensing function, which is simpler and more compact, and can accurately monitor and obtain current information when the chip is working, so as to better protect the chip inside the module and expand its application It solves the problem that semiconductor current detection sensors mostly use the Hall effect or try to make all the current of the device flow through the sensor, but it is difficult to monitor for high-power semiconductor devices.

Images