Atomic layer etching equipment and atomic layer etching method

An atomic layer etching and equipment technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as incomplete removal of residual gas in etching efficiency, achieve precise control of process damage and uniformity, shorten operation cycle time, The effect of reducing time

Active Publication Date: 2020-01-21
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the existing methods, this application proposes an atomic layer etching equipment and etching method to solve the technical problems of the existing technology in the etching efficiency and incomplete removal of residual gas

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  • Atomic layer etching equipment and atomic layer etching method
  • Atomic layer etching equipment and atomic layer etching method
  • Atomic layer etching equipment and atomic layer etching method

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Embodiment Construction

[0026] The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

[0027] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be ...

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Abstract

The embodiment of the invention provides atomic layer etching equipment and an atomic layer etching method. The atomic layer etching equipment comprises a process chamber, an upper radio frequency assembly and an auxiliary plasma generating device; the upper radio frequency assembly is used for applying radio frequency power to the process chamber so as to excite process gas entering the process chamber into plasma; and the auxiliary plasma generation device is used for conveying electrons to the process chamber, so that the plasma is stabilized in an inductive coupling discharge mode. According to the embodiment of the invention, the process chamber can quickly enter an inductive coupling discharge mode, the time for the plasma to enter the inductive coupling discharge mode is shortened,and the time of each operation period of the atomic layer is shortened, so that the atomic layer etching efficiency and the process yield are improved.

Description

technical field [0001] The present application relates to the technical field of atomic layer etching, and in particular, the present application relates to an atomic layer etching equipment and an etching method. Background technique [0002] At present, in the atomic layer etching process, a chemically active gas (such as chlorine gas) and an inert gas (such as argon gas) need to be fed separately, and the discharge method usually adopts an inductively coupled discharge method. An operation cycle in the atomic layer etching process generally includes four steps: (1) Adsorption step, the substrate surface is exposed to the reaction gas, the process gas is passed into the process chamber and is ionized to form a weak plasma, and the process gas adsorption activity (2) The removal step removes the remaining process gas from the reaction; (3) The etching step exposes the adsorption layer to an inert gas, and after ionization, the plasma is bombarded by the inert ions on the su...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/321H01J37/32862H01J2237/3343
Inventor 赵晓丽
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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