A preparation method of carbon nanotube array beam with adjustable aspect ratio applied to field emission cold cathode
A technology of carbon nanotube arrays and aligned carbon nanotubes, which is applied in the intersecting field of nano-materials and vacuum electronics technology, can solve the problems that the smallest diameter can only reach 25 μm and limit applications.
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Embodiment 1
[0022] The present invention proposes as image 3 The specific steps of the process for preparing the carbon nanotube microbeam array with an aspect ratio of 2:1 include:
[0023] Step 1 Preparation of vertically aligned carbon nanotube array film with a length of 300 μm
[0024]Using a silicon wafer as the substrate, immerse the substrate in ethanol and ultrasonically clean it to remove the adsorbed particles and grease on the surface of the silicon wafer; then use physical vapor deposition technology, using metal iron as the deposition source, and deposit An iron catalyst film with a thickness of 5nm forms the catalyst required for the synthesis of carbon nanotube arrays; finally, the silicon wafer loaded with the catalyst is transferred to a vacuum reaction chamber, and 50 sccm hydrogen carrier gas and 10 sccm acetylene carbon source gas are introduced in a vacuum environment , the temperature of the silicon wafer loaded with the catalyst is controlled at 650°C, and the mi...
Embodiment 2
[0029] Step 1 Preparation of vertically aligned carbon nanotube array film with a length of 300 μm
[0030] Using a silicon wafer as the substrate, immerse the substrate in ethanol and ultrasonically clean it to remove the adsorbed particles and grease on the surface of the silicon wafer; then use physical vapor deposition technology, using metal iron as the deposition source, and deposit An iron catalyst film with a thickness of 5nm forms the catalyst required for the synthesis of carbon nanotube arrays; finally, the silicon wafer loaded with the catalyst is transferred to a vacuum reaction chamber, and 50 sccm hydrogen carrier gas and 10 sccm acetylene carbon source gas are introduced in a vacuum environment , the temperature of the silicon wafer loaded with the catalyst is controlled at 650°C, and the microwave power is 100W, and the carbon nanotube array film is prepared; by controlling the growth time of the carbon nanotube, a tube with a diameter of about 20nm is synthesi...
Embodiment 3
[0035] Step 1 Preparation of vertically aligned carbon nanotube array film with a length of 300 μm
[0036] Using a silicon wafer as the substrate, immerse the substrate in ethanol and ultrasonically clean it to remove the adsorbed particles and grease on the surface of the silicon wafer; then use physical vapor deposition technology, using metal iron as the deposition source, and deposit An iron catalyst film with a thickness of 5nm forms the catalyst required for the synthesis of carbon nanotube arrays; finally, the silicon wafer loaded with the catalyst is transferred to a vacuum reaction chamber, and 50 sccm hydrogen carrier gas and 10 sccm acetylene carbon source gas are introduced in a vacuum environment , the temperature of the silicon wafer loaded with the catalyst is controlled at 650°C, and the microwave power is 100W, and the carbon nanotube array film is prepared; by controlling the growth time of the carbon nanotube, a tube with a diameter of about 20nm is synthesi...
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