Unlock instant, AI-driven research and patent intelligence for your innovation.

Novel reconfigurable dual-band-pass filter based on memristors

A dual-band-pass, memristor technology, applied in waveguide-type devices, electrical components, circuits, etc., can solve the problem of less RF filters

Active Publication Date: 2020-02-07
HANGZHOU DIANZI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the SPICE-based memristor modeling technology is relatively mature, but there are still relatively few applications that can realize passband selective reconfiguration in RF filters by adjusting memristors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel reconfigurable dual-band-pass filter based on memristors
  • Novel reconfigurable dual-band-pass filter based on memristors
  • Novel reconfigurable dual-band-pass filter based on memristors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0020] The reconfigurable bandpass filter based on the memristor used in this embodiment is different from the reconfigurable mode in the previous filter, and the following related calculations and analyses are based on the complete radio frequency filter structure.

[0021] like figure 1 As shown, the invention loads two memristors M1 and M2 on the basis of a dual bandpass filter. The invention mainly includes a dual-band-pass filter, two memristors, and four SPDT switches; the 3 ports of the SPDT2 switch SPDT2 are loaded in the dual-band-pass filter to generate a suitable position A of the low-frequency passband, and the SPDT2 Port 1 is connected to one end of the memristor M1 and port 2 of the SPDT1 switch respectively, and the port 2 of SPDT2 is floating; the other end of the memristor M1 is grounded; the port 1 of the SPDT1 switch is used to access the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a novel reconfigurable dual-band-pass filter based on memristors. A memristor regulating and controlling circuit is introduced, so that the interference of the memristor regulating and controlling voltage on the whole circuit test can be effectively avoided. Meanwhile, the invention provides a radio frequency filter structure which based on the memristor with a wide tuningrange and can realize the reconfigurable filter pass band by controlling and regulating voltage. The loaded memristor has the advantages of low power consumption, excellent linearity at high frequency and the like, and meets the development requirements of modern radio frequency communication systems. The small size of the memristor brings advantages to the reduction of the overall circuit size,and meanwhile, the loaded memristor can realize the function of multi-mode switching in a radio frequency filter.

Description

technical field [0001] The invention belongs to the cross field of electronic information technology and memristor technology, and in particular relates to a radio frequency filter whose passband can be reconfigured by adjusting the loaded memristor. Background technique [0002] With the rapid development of wireless communication technology in the 21st century, the reconfigurable RF filter, as an indispensable part of the RF front-end, has been paid more and more attention by relevant researchers in recent years. At present, the reconfigurable way of RF filter is mainly through varactor diodes, PIN diodes, MEMS switches and other devices for tuning. Devices such as varactors, PIN diodes, and MEMS switches can only adjust the center frequency or bandwidth of the filter, and the continuous power supply of the tuning device will increase the power consumption of the overall circuit. As the current spectrum resources are becoming more and more scarce, the spectrum resources c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01P1/20
CPCH01P1/20
Inventor 游彬赵国凯高坤坤俞梦缘
Owner HANGZHOU DIANZI UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More