Test structure, failure analysis location method and failure analysis method
A technology for testing structure and failure analysis, which is applied in non-contact testing, single semiconductor device testing, semiconductor/solid-state device testing/measurement, etc. It can solve the problem of not being able to locate short-circuit points of nA-level leakage in ultra-large-area structures, and achieve a solution The effect of process issues
Active Publication Date: 2021-07-16
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0006] The purpose of the present invention is to provide a test structure to solve the problem that the electrical resistance change technology cannot locate the short circuit point of nA level leakage in the super large area structure
Method used
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Embodiment Construction
[0043] Existing test structures that combine serpentine and comb-shaped monitoring of metal short circuits are as follows: figure 1 As shown, the test structure includes a serpentine metal wire 01 and two relatively staggered test comb structures, each of which includes a number of finger structures 0201 parallel to each other and each finger The handle 0202 connected to one end of the same side of the structure 0201, the serpentine metal wire 01 is located between the interpenetrating finger structures 0201 and is on the same plane as all the finger structures 0201 without touching each other.
[0044] By testing whether there is current passing between the serpentine metal wire 01 and the test comb structure, it is judged whether a metal short circuit occurs. In the event of a metal short circuit problem such as figure 2 As shown, failure analysis means are needed to find the short circuit point and deduce the root cause of the metal short circuit. Failure analysis is div...
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The present invention provides a test structure, which includes serpentine metal wires and two test comb-like structures that are relatively interlaced, each test comb-like structure is divided into at least two sub-comb-like structures, and each of the test comb-like structures There is a gap between two adjacent sub-comb-shaped structures, and at least one turning position of the serpentine metal line in at least one of the gaps in each of the test comb-shaped structures leads to a pad . That is, the test structure is divided into several small-area test structures by the above method, which can solve the problem that EBIRCH cannot locate the short-circuit point of nA level leakage in super-large-area structures; at the same time, combined with the resistance ratio method, EBIRCH can be easily located. The short-circuit point of nA-level leakage in super-large-area structures, so as to find the root cause of failure, can be of great help to solve process problems and promote research and development progress.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a test structure, a failure analysis and positioning method and a failure analysis method. Background technique [0002] The semiconductor manufacturing process is divided into the front-end device process and the back-end metal interconnection process. The role of the back-end metal interconnection layer is to lead out the front-end devices for testing or work. In the semiconductor manufacturing process, short-circuit failure or open-circuit failure often occurs in the back-end metal interconnection, which is mainly due to design problems and process problems. In order to evaluate the design structure and monitor the stability of the online process, the complex product structure is extracted separately or reorganized into a repeated, large-area, and easy-to-test structure with this structure as a unit. Through the electrical testing of these test structures, it is obta...
Claims
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IPC IPC(8): H01L23/544H01L21/66G01R31/26G01R31/265
CPCG01R31/2601G01R31/2653H01L22/14H01L22/32H01L22/34
Inventor 武城赵新伟段淑卿高金德
Owner SHANGHAI HUALI MICROELECTRONICS CORP