Miniature LED chip manufacturing method, miniature LED display device manufacturing method and miniature LED display device

A technology of LED chips and manufacturing methods, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of Micro-LED device loss, device transfer yield loss, device damage, etc., to avoid chip displacement and loss, The effect of improving transfer yield and accuracy

Inactive Publication Date: 2020-02-25
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The high energy concentration of the laser is easy to cause damage to the device, and the wet etching method will cause the loss of Micro-LED devices due to the difficulty in controlling the etching rate, resulting in the loss of device transfer yield

Method used

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  • Miniature LED chip manufacturing method, miniature LED display device manufacturing method and miniature LED display device
  • Miniature LED chip manufacturing method, miniature LED display device manufacturing method and miniature LED display device
  • Miniature LED chip manufacturing method, miniature LED display device manufacturing method and miniature LED display device

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Embodiment Construction

[0046] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0047] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

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Abstract

The embodiment of the invention provides a miniature LED chip manufacturing method, a miniature LED display device manufacturing method and a miniature LED display device. A first transfer substrate and a second transfer substrate are provided, an epitaxial layer on the surface of the substrate is firstly attached to the first transfer substrate, and the substrate is stripped from the epitaxial layer; one side, far away from the first transfer substrate, of the epitaxial layer is then attached to the second transfer substrate, the first transfer substrate is stripped from the epitaxial layer,and the side for chip manufacturing of the epitaxial layer is exposed; and finally, miniature LED manufacturing is carried out on one side, far away from the second transfer substrate, of the epitaxial layer to form a miniature LED chip array. Therefore, the problems of chip displacement and loss risks caused by transferring after chip manufacturing in a traditional mode are solved, and the transfer yield and accuracy are improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for manufacturing a micro-LED chip, a method for manufacturing a micro-LED display device, and a micro-LED display device. Background technique [0002] Micro-LED (miniature LED) has the advantages of thinness, long life, low power consumption, etc., and is a new generation of display technology equipment. However, due to the very small size of the Micro-LED device, in the process of bonding it with the driving circuit and making it full-color, we are faced with the technical problem of mass transfer, that is, how to transfer a large number of Micro-LED devices to the receiver accurately and without displacement. on the substrate and keep the loss rate of Micro-LED devices low. [0003] At present, the commonly used method is to prepare the Micro-LED device first, then peel it from the original epitaxial substrate, and then transfer it...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/00H01L33/06H01L33/38
CPCH01L27/156H01L33/005H01L33/06H01L33/387
Inventor 郭婵龚政潘章旭刘久澄龚岩芬王建太庞超胡诗犇
Owner GUANGDONG INST OF SEMICON IND TECH
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