3results about How to "Improve transfer yield" patented technology

The application discloses a selective batch transfer method based on a phase change material, which comprises the following steps: preparing a patterned bump array on a heat-conducting substrate, coating rosin on the surface of the patterned bump array; obtaining a donor substrate with a micro-element array on the surface, and corresponding bonding the patterned bump array coated with rosin and the micro-element array; controlling the temperature of the heat-conducting substrate to change the state of the rosin, so that the micro-element array is fixedly connected with the corresponding patterned bump array, and then picking up the micro-element array from the donor substrate; bonding the picked-up micro-element array with a receptor substrate surface, and changing the rosin from a solid state to a liquid state, so that the patterned bump array is separated from the corresponding micro-element array. By using the method, batch, selective and non-polluted transfer of non-planar or planar micro-elements can be realized. The application further discloses a thermoelectric element array and a preparation method thereof.

The invention provides a three-dimensional stacked RRAM memory and a preparation method thereof, and the preparation method of the three-dimensional stacked RRAM memory comprises the steps: providing a layout of an RRAM memory wafer, the layout being in an axial symmetry layout along a Y direction; preparing a set of mask plate according to the layout, wherein the pattern of the mask plate is in axial symmetry along the Y direction; a plurality of RRAM storage wafers are prepared by using the same set of mask, all the RRAM storage wafers have the same chip arrangement, and the bonding surfaces of the RRAM storage wafers have the same bonding structure; preparing a logic wafer; respectively carrying out back thinning on the RRAM storage wafer and the logic wafer, and manufacturing through silicon vias; and stacking and bonding the plurality of RRAM storage wafers along the thickness direction of the logic wafer. The layout symmetrical along the Y axis is adopted, so that the mask can be repeatedly used, and the design times are reduced; and with the same bonding structure, the bonding precision is improved.

The invention discloses a color conversion full-color Micro LED chip structure and a manufacturing method. A chip comprises transparent protective glue, a Si substrate, transparent filling glue and a color conversion material which are embedded in the Si substrate, a transparent adhesion layer, a Micro LED chip, isolation insulation glue, a wiring circuit, protective glue and an electrode. The isolation insulation glue and the protection glue are respectively provided with through holes to realize interlayer interconnection. According to the manufacturing method, mass production is achieved through the steps of silicon wafer groove preparation, transparent filling glue coating and etching, color conversion material printing, Micro LED chip mass transfer, wiring and electrode manufacturing, back face processing and cutting and the like. The embedded integrated design is adopted to simplify the chip structure, the process flow is optimized, the cost is reduced, the Si substrate improves the heat dissipation performance, the brightness and the color purity are optimized, the problems that in the prior art, the structure is complex, and light crosstalk is serious are solved, and the LED module is suitable for high-definition display, vehicle-mounted display, AR / VR and other scenes.