40results about How to "Improve stripping yield" patented technology

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, which belong to the photoelectric field. The epitaxial wafer comprises a first buffer layer, a graphene layer, a second buffer layer and an epitaxial structure layer from a substrate to a surface layer; and the epitaxial structure layer is composed of an N-type semiconductor layer, a multiple quantum well layer, a P-type electron blocking layer and a P-type semiconductor layer from the second buffer layer to the surface layer. In comparison with the traditional GaN-based epitaxial wafer structure, the graphene layer is added to enable the GaN-based epitaxial structure layer to be stripped from the substrate by using a mechanical mode, a laser device does not need to be adopted, and the stripping yield is improved; in comparison with other techniques of using a transfer mode to place the graphene layer on the substrate, the buffer layers exist between the graphene layer and the substrate for connection, and the problem of poor adhesion between the graphene layer and the substrate does not exist.

The invention discloses a synthesis method of a two-dimensional transition metal chalcogenide, which comprises the following steps: heating: heating a transition metal compound raw material to a reaction temperature in an inert gas environment; topological conversion reaction step: introducing a gas containing a chalcogen or a mixed gas of the gas containing the chalcogen and the gas containing the phosphorus, and maintaining the reaction temperature for a set period of time, so that the chalcogen, or the chalcogen and the phosphorus are subjected to a topological conversion reaction with the transition metal compound raw material, and generating the two-dimensional transition metal chalcogenide. The synthesis method has the advantages of high reaction degree, high yield, low energy consumption and high efficiency, the obtained two-dimensional transition metal chalcogenide is high in single-layer rate and narrow in layer number distribution, macro preparation can be realized, and the synthesis method has an excellent industrial application prospect.

A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrO2 film forming process that forms a ZrO2 film so as to cover the exposed p-type semiconductor layer; an Al2O3 film forming process that forms an Al2O3 film so as to cover the ZrO2 film; a mask layer removing process; and an electrode layer forming process. The method for manufacturing the semiconductor light-emitting device increases the yield of lift-off with respect to the p-type semiconductor layer and can produce a semiconductor light-emitting device with an improved voltage resistance.

The invention provides a flexible OLED display device stripping method. The method includes steps of coating one face of a carrier base plate with a film layer, wherein the carrier base plate is one among a glass board, an acrylic board and a rough-surface metal board and the material of the film layer includes at least one among naphthalene, phosphorus pentachloride, amine compound, poly alcohol compound and paraffin; forming a flexible substrate layer on the film layer; forming a low temperature polycrystalline silicon layer on the flexible substrate layer; forming a light emitting layer on the low temperature polycrystalline silicon layer; forming a packaging layer on the light emitting layer; heating the film layer until the substrate layer disengages from the carrier base plate. Therefore, the flexible OLED display device is obtained. According to the invention, the flexible OLED display device can be separate from the carrier base plate simply and a condition that the flexible substrate layer of the display device is difficult to separate from the carrier base plate is avoided and damage of the film in the OLED display device due to pulling is avoided. Thus, the yield of the OLED display device in the stripping process is increased.

The invention discloses a flexible screen bonding area structure and a manufacturing method thereof. The flexible screen bonding area structure is provided with a flexible screen and a chip arranged on the surface of the flexible screen; the flexible screen is provided with a bonding area for bonding the chip; the bonding area is coated with a flexible protection layer; and the flexible protection layer surrounds the chip. In comparison with the prior art, through forming the flexible protection layer with a different hardness around the chip, the stress generated around the chip in the case of debonding can be greatly dispersed, hierarchy stress is formed, stress gathering at the position closely around the chip can be avoided, the risk that a line around the chip is pulled broken can be reduced, and the debonding yield of the flexible screen is finally improved.

The invention belongs to the technical field of chemical material synthesis, in particular to a preparation method of an acid type niobium phosphate oxygen monoatomic layer sheet. The method comprisesthe following steps: preparing acid type niobium phosphate oxygen precursor blocks with a chemical liquid phase synthesis method, and washing and drying the blocks to obtain powder; preparing the acid type niobium phosphate oxygen monoatomic layer sheet with an ultrasonic solvent assisted stripping method. The acid type niobium phosphate oxygen monoatomic layer sheet is uniform and stable ultrathin nanosheet colloid. The prepared acid type niobium phosphate oxygen monoatomic layer sheet has transverse dimension of tens of nanometers to hundreds of nanometers and thickness of about 1 nm, and can realize 10 mg / mL high-concentration stable dispersion in a water phase or an ethanol solvent. The synthesis and stripping yield realized with the method can be stably kept at 98% or higher. The method is simple, convenient, safe and efficient, and has potential value for application research of layered acid type phosphorus niobium oxygen in the fields of electrochemical energy storage, photoelectric conversion devices, chemical catalysis, electrocatalysis and the like.

The invention provides a method and apparatus of separating a substrate from a light emitting assembly. The method includes the steps: providing a to-be-separated light emitting assembly, wherein the light emitting assembly includes a first substrate, a gallium nitride epitaxial layer arranged at one side of the first substrate, and a metal substrate, and the gallium nitride epitaxial layer includes an N-type gallium nitride layer, an active layer and a P-type gallium nitride layer; and adjusting utilizing a laser generator to separate the first substrate through laser, wherein an aperture diaphragm is arranged on the path of laser emitted from the generator so that light spots of the laser are adjusted in size through the aperture diaphragm. In this way, light spots as small as possible can be utilized to carry out separation through laser, so less nitrides will be produced locally, and the substrate separation yield rate can be improved.

The invention belongs to the technical field of fuel-short after-treatment and discloses a plutonium purification and concentration method. The method comprises the following steps: extracting tetravalent plutonium in a nitric acid solution into a 30% TBP (tributyl phosphate)-kerosene solution with relatively small volume for purification and concentration in a centrifugal extractor, reducing tetravalent plutonium into trivalent plutonium by using a dimethylhydroxylamine-containing nitric acid solution with relatively small volume, performing back extraction on trivalent plutonium, and further purifying and concentrating plutonium in a water phase. In the whole concentration process, a plutonium replenishment and extraction link is removed. The method is simple in step, short in time and small in solvent radiation effect; the plutonium back-extraction yield reaches up to 99.98% while the plutonium concentration is increased by more than 10 times.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, which belong to the photoelectric field. The epitaxial wafer comprises a first buffer layer, a graphene layer, a second buffer layer and an epitaxial structure layer from a substrate to a surface layer; and the epitaxial structure layer is composed of an N-type semiconductor layer, a multiple quantum well layer, a P-type electron blocking layer and a P-type semiconductor layer from the second buffer layer to the surface layer. In comparison with the traditional GaN-based epitaxial wafer structure, the graphene layer is added to enable the GaN-based epitaxial structure layer to be stripped from the substrate by using a mechanical mode, a laser device does not need to be adopted, and the stripping yield is improved; in comparison with other techniques of using a transfer mode to place the graphene layer on the substrate, the buffer layers exist between the graphene layer and the substrate for connection, and the problem of poor adhesion between the graphene layer and the substrate does not exist.

The invention discloses a method and equipment for peeling a layered material and screening and separating two-dimensional nanosheets. The layered material is of a lamellar structure, and is peeled toobtain the two-dimensional nanosheets. The method comprises the following steps: S1, mixing a layered material and a solvent; S2, adding the mixed solution into an emulsifying-dispersing machine forpeeling; S3, introducing the peeled mixed solution into a primary separator for separating to obtain a precipitate containing the non-peeled layered material and a liquid phase part containing two-dimensional nanosheets, carrying out a step S4 on the precipitate, and carrying out a step S5 on the liquid phase part; S4, mixing the precipitate and the solvent again for peeling, carrying out the stepS3 again after peeling, and repeatedly peeling the layered material; S5, conveying the liquid phase part into a secondary for screening and separating. By adopting the method and equipment, the layered material with the lamellar structure is peeled continuously and mechanically, and the two-dimensional nanosheets obtained by peeling are screened and separated, so that two-dimensional nanosheets with a narrow and single size range can be obtained.

The invention discloses a display panel motherboard and a manufacturing method of the display panel, which belong to the field of display technology. The display panel motherboard includes a rigid substrate and a flexible substrate, and the display panel motherboard also includes a liquid affinity adjustable layer arranged between the rigid substrate and the flexible substrate, and the liquid affinity A degree-tunable layer bonds the flexible substrate to the rigid substrate. The adjustable liquid affinity layer provided on the motherboard of the display panel of the present invention can improve the peeling yield of the motherboard of the display panel.

The invention discloses a laser peeling device and method, wherein the laser peeling device includes: a working conveyor belt for driving the display screen to be peeled to move on it, and the display screen to be peeled includes a glass substrate and a flexible display screen; The mask shielding device of the area and the light-shielding area, wherein the light-transmitting area is used to transmit a part of the laser beam and make it irradiate on the display screen to be peeled driven by the operation conveyor belt, so as to perform laser peeling on the display screen to be peeled off, In this way, a flexible display screen and a glass substrate separated from each other are obtained; and the light-shielding area is used to block the remaining part of the laser beam, so as to prevent the laser from irradiating areas other than the display screen to be peeled off on the operation conveyor belt. The laser stripping device and method of the present invention are compatible with large screens and small screens.

The invention discloses a medical medicine stripping machine and a medicine stripping method, and belongs to the technical field of medical instruments. The medical medicine stripping machine comprises a medicine tamping device and a medicine feeding mechanism. The medicine tamping device comprises a base plate, hole sites are formed in the base plate in an array mode, a medicine tamping rod and a micro motor are installed in each hole site, and the output end face of each micro motor and one end of the corresponding medicine tamping rod are both inclined planes. The medicine feeding mechanism is installed on the inner wall of a cylindrical shell, the medicine feeding mechanism comprises an annular cylinder, a conductive sliding ring, a driver and a clamping device, and the conductive sliding ring is electrically connected to the clamping device. A circle of the clamping device is installed in the annular cylinder, and the output end of the driver is connected with the annular cylinder. A mounting hole is formed in the shell wall of the cylindrical shell, the medicine tamping device is fixed in the mounting hole, a notch corresponding to the driver is formed in the annular cylinder, and when the annular cylinder rotates, the notch is intermittently communicated with the mounting hole. According to the medical medicine stripping machine and the medicine stripping method, medicine stripping is conducted in the mode that medicine plates are clamped and then tamps medicine on the front face, manual adjustment is avoided, and the medicine stripping yield is increased.

The invention discloses a line recognition module and a preparation method thereof, and a display device, and aims to improve the stripping yield. The embodiment of the invention provides a line recognition module. The line recognition module comprises a flexible substrate which comprises a line recognition area and a binding area located outside the line recognition area; a plurality of line recognition units which are located on one side of the flexible substrate in the line recognition area; a plurality of signal lines which are located on the same side of the flexible substrate as the pattern recognition units and electrically connected with the pattern recognition units, each signal line extending to the binding area from the pattern recognition area; a driving chip which is bound with the signal line in the binding area; and an adhesive layer which is located on the side, away from the line recognition units, of the flexible substrate, the orthographic projection of the adhesive layer on the flexible substrate being not overlapped with the binding area.

The invention relates to the field of glass manufacturing, and discloses an aluminosilicate glass composition, aluminosilicate glass and a preparation method and application thereof. Based on the total weight of the aluminosilicate glass composition, the aluminosilicate glass composition contains 55-73wt% SiO 2 , 7‑28wt% Al 2 o 3 , 0‑8wt% of B 2 o 3 , 0.05‑4wt% TiO 2 , 2‑20wt% alkaline earth metal oxide RO, 0‑1wt% Gd 2 o 3 , 0‑2wt% La 2 o 3 and unavoidable impurities. The glass prepared by the invention has the characteristics of high thermal stability, high strain point, high UV 308nm transmittance, low thermal expansion coefficient and low static electricity, and is suitable for large-scale industrial production.

The invention provides an alkaline non-scratch deplating solution, which in mass percentage comprises: ammonia water 25%-30%; diethylene glycol dibutyl ether 20%-25%; benzyl alcohol 5%-10%; Butyrolactone 4% to 8%; triethylene glycol 2% to 2.5%; JFC 8% to 12%; the balance of water. The above-mentioned stripping solution provided by the present invention can strip the ink on the product without adding new scratches to the product during the stripping process, without regrinding. , reduce the company's rework cost, improve the secondary yield, and at the same time, the stripping time is short, and the stripping yield is high, which can effectively protect the product's appearance transparency and roughness. The de-plating solution is an environmentally friendly agent, does not cause damage to the human body and the environment, has little environmental pollution, and has high industrial application value.

The invention discloses a composite functional P type electrode of a deep ultraviolet LED of a vertical structure and a preparation method. According to the preparation method, a bonding layer and a reflector layer are sequentially prepared on the P surface of a cleaned AlGaN-based deep ultraviolet epitaxial wafer through electron beam evaporation or magnetron sputtering; a three-dimensional functional pattern mask is prepared by using a photoetching, nano-imprinting or nano-ball mask method; and a three-dimensional composite functional layer is prepared; and after cleaning is performed, a filling layer, an isolation layer and an electrode layer are sequentially prepared. The composite functional P type electrode prepared by using the preparation method can be used for AlGaN-based deep ultraviolet LEDs of a vertical structure and an inverted structure, and therefore, highly-efficient deep ultraviolet wave band reflectance can be realized, support can be provided for an epitaxial layerduring laser stripping, and stress non-destructive release can be realized.

The invention discloses a method for preparing a Micro-LED chip and peeling off a substrate in the field of optoelectronic devices. The Micro-LED chip preparation and substrate peeling method includes the following steps: step 1, uniformly coating UV glue on a transparent substrate; step 2, growing Al on the transparent substrate coated with UV glue 2 O 3 Thin film and LED thin film structure; step three, in Al 2 O 3 A discrete Micro-LED structure is formed on the thin film and the LED thin film structure; step 4, irradiating the back of the transparent substrate with an ultraviolet surface light source, the transparent substrate and the Al 2 O 3 The UV glue between the films is desensitized and loses its viscosity, so as to achieve the purpose of separating the Micro-LED structure from the transparent substrate, forming a Micro-LED chip. The invention can quickly realize the peeling of the Micro-LED chip substrate, has high work efficiency, low cost and high yield.