Micro-LED chip preparation and substrate stripping method

A chip and substrate technology, applied in the field of Micro-LED chip preparation and substrate peeling, can solve the problems of damage to the LED active layer, peeling failure, inability to effectively melt the GaN buffer layer, etc., to achieve convenient interconnection, simple installation, The effect of high peel yield

Active Publication Date: 2021-08-24
NANJING RGB INFORMATION TECH CO LTD
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Problems solved by technology

At the same time, the laser energy needs to be precisely regulated to reach the GaN buffer layer. If the energy is too high, it will damage the active layer of the LED. If the energy is too small, it may not be able to effectively melt the GaN buffer layer and cause peeling failure.

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  • Micro-LED chip preparation and substrate stripping method

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Embodiment Construction

[0027] Below in conjunction with specific embodiment, further illustrate the present invention, it should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention, after reading the present invention, those skilled in the art will understand the various equivalent forms of the present invention All modifications fall within the scope defined by the appended claims of the present application.

[0028] It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.

[0029] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "vertical", "peripheral surface" and so on are based on the orientation or positional relationship shown in the drawings, or...

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Abstract

The invention discloses a Micro-LED chip preparation and substrate stripping method in the field of photoelectric devices. The Micro-LED chip preparation and substrate stripping method comprises the following steps: 1, uniformly coating a transparent substrate with an ultraviolet adhesive; 2, growing an Al2O3 thin film and an LED thin film structure on the transparent substrate coated with the ultraviolet glue; 3, forming discrete Micro-LED structures on the Al2O3 thin film and the LED thin film structure; 4, irradiating the back surface of the transparent substrate by using an ultraviolet surface light source, desensitizing the ultraviolet glue between the transparent substrate and the Al2O3 film, and losing viscosity, thereby achieving the purpose of separating the Micro-LED structure from the transparent substrate, and forming the Micro-LED chip. According to the invention, the micro-LED chip substrate can be rapidly stripped, the working efficiency is high, the cost is low, and the yield is high.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for preparing a Micro-LED chip and peeling off a substrate. Background technique [0002] With the continuous progress of LED in chip manufacturing, integrated packaging, display control and process technology, LED is not only widely used in the field of semiconductor lighting, but also gradually penetrates into the field of LED display. LED small-pitch display (Mini-LED) and micro-pitch display (Micro-LED) will be widely used in high-definition TV, Wearable electronics, VR, AR and other fields are expected to become powerful competitors of LCD and OLED in the future, ushering in explosive growth. [0003] LED small-pitch display (Mini-LED) and micro-pitch display (Micro-LED) require that the dot pitch of LED full-color pixels be 10-300um, where LED full-color pixels are composed of three sub-pixels of red, green and blue, and each sub-pixel Size 2um-50u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 郭德博李忠
Owner NANJING RGB INFORMATION TECH CO LTD
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