Graphical epitaxial structure laser lift-off device

An epitaxial structure and laser lift-off technology, applied in lasers, laser welding equipment, semiconductor lasers, etc., can solve the problems of high price of homoepitaxial thick film substrates and inability to obtain comprehensive applications, and achieve high lift-off yield and clever design. , the effect of convenient operation

Pending Publication Date: 2018-09-14
NANTONG ZHONGTIE HUAYU ELECTRICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In all these applications, the quality of material growth has an important impact on device performance. To improve device performance, homoepitaxial is one of the most important solutions, but homoepitaxial thick film substrates are expensive, making it impossible to obtain comprehensive application, the currently commonly used patterned substrate has become a main way, and the patterned substrate is of great significance for releasing the stress in the process of material epitaxial growth

Method used

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  • Graphical epitaxial structure laser lift-off device
  • Graphical epitaxial structure laser lift-off device
  • Graphical epitaxial structure laser lift-off device

Examples

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Embodiment 1

[0021] Embodiment one, the structure diagram of the present invention is as attached figure 1 shown.

[0022] Firstly, adjust the temperature control system in the air intake pipe (51), exhaust pipe (52) and the stripping chamber (7) to achieve suitable conditions for laser stripping.

[0023] When the laser light emitted by the ultraviolet light source (6) enters the peeling chamber (7), it is shaped by the shaping structure (2), and there is a local transmittance adjustment film (3) between the shaping structure (2) and the surrounding area (transmittance adjustment structure) A), forming a non-uniform and adjustable light spot from the center to the edge, passing through the substrate (1) (sapphire substrate), reaching the interface between the sapphire substrate (41) and the epitaxial structure (40), the interface Including the oblique interface (43) between the patterned structure (42) and the epitaxial structure (40), the flat interface (44) between the sapphire substra...

Embodiment 2

[0025] Embodiment 2, the structure diagram is as follows figure 2 shown. The difference between this embodiment and Embodiment 1 is that after the epitaxial structure (40) is grown on the front side of the sapphire substrate (41), the back side of the sapphire substrate (41) is also polished and processed to form a back patterned structure (45). The shape of the patterned structure (42) can be the same or different, and the size can be the same or different. The function of this structure is to modulate or compensate light. For example, when the light spot passes through the substrate (1) and reaches the upper surface of the sample , if the patterned structure ( 45 ) on the back is a hemispherical lens structure, it can refocus the light, thereby forming a local high energy density. In addition, the adjustment of light has also changed. In addition to the shaping structure (2), the partial transmittance adjustment film (3) adopts a hollow structure, thereby adjusting the tra...

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Abstract

The present invention relates to a graphical epitaxial structure laser lift-off device. The device comprises a substrate, a shaping structure, a transmissivity regulation structure, a graphical epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light-in window. Two sides of the lift-off chamber are respectively provided with the gas transmission systems,the light-in window is arranged on the lift-off chamber, the ultraviolet source is arranged above the outer side of the light-in window, the graphical epitaxial structure is arranged in the light-inwindow, the graphical epitaxial structure is provided with the substrate, the graphical epitaxial structure comprises an epitaxial structure, a sapphire substrate, graphical structures, inclined interfaces, planar interfaces, the plurality of graphical structures are uniformly arranged on the epitaxial structure, each graphical structure is one V-shaped slot structure formed by two inclined interfaces, and each planar interface is connected between each two adjacent graphical structures. The graphical epitaxial structure laser lift-off device is ingenious in design and convenient to operate, can achieve lift-off of the graphical substrate and can improve the lift-off yield.

Description

technical field [0001] The invention relates to a laser lift-off device, in particular to a patterned epitaxial structure laser lift-off device. Background technique [0002] Gallium nitride-based materials and optoelectronic device materials have become more and more widely used in optoelectronic devices and other fields in recent years, especially the current Micro LED, which has more important application value in lighting, display and other fields. In all these applications, the quality of material growth has an important impact on device performance. To improve device performance, homoepitaxial is one of the most important solutions, but homoepitaxial thick film substrates are expensive, making it impossible to obtain comprehensive application, the currently commonly used patterned substrate has become a main way, and the patterned substrate is of great significance for releasing the stress in the process of material epitaxial growth. However, in the preparation of mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78H01L31/18
CPCH01L21/7806H01L31/1892G02B3/0006H01L21/78H01L33/007H01L33/0093B23K26/0648B23K26/127B23K26/0622B23K26/53G02B27/0955H01L33/20H01S5/0213H01S5/0217H01S2304/02
Inventor 何小峰李成明何秀平陈建锋
Owner NANTONG ZHONGTIE HUAYU ELECTRICS
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