Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method

A composite function, vertical structure technology, applied in circuits, electrical components, nanotechnology for materials and surface science, etc. Laser lift-off yield, good adhesion and support, the effect of reducing the threshold energy density

Active Publication Date: 2019-04-12
XI AN JIAOTONG UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to poor epitaxial quality and low doping efficiency, it leads to difficulties in electric injection, weak luminescence, carrier congestion and severe heat generation.
[0003] At present, many research institutions have used the flip-chip structure to prepare AlGaN-based deep ultraviolet chips. Although the light output has improved, there is still a phenomenon of current congestion.
The vertical structure can effectively overcome the problems of light extraction and current diffusion, but the laser lift-off of the sapphire substrate / AlN epitaxial layer is a difficult problem: the traditional deep ultraviolet LED electrodes cannot provide sufficient support during laser lift-off, resulting in the epitaxial layer being in Cracks when peeled off; while the reflective mirror electrode system using GaN-based blue LEDs, the electrode material has a high absorption of deep ultraviolet light

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method
  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method
  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0039] like figure 1 , Figure 2a , Figure 2b , Figure 3a , Figure 3b , Figure 4a , Figure 4b , Figure 5a , Figure 5b , Figure 6a and Figure 6b As shown, the preparation method of the composite function P-type electrode of a kind of vertical structure deep ultraviolet LED provided by the present invention comprises the following steps:

[0040] The first step is to grow an AlGaN-based deep ultraviolet LED epitaxial structure on a sapphire substrate, and perform in-situ annealing after the growth is completed to realize carrier activation;

[0041] In the second step, the grown AlGaN-based deep ultraviolet LED epitaxial wafer 1 was treated with H 2 SO 4 with H 2 o 2 The mixed solution is heated, then rinsed and dried;

[0042] In the third step, the surface of the P-type layer of the AlGaN-based deep ultraviolet LED epitaxial wafer obtained in the second step after cleaning is prepared through an electron beam evaporation platform or a magnetron sputterin...

Embodiment 1

[0049] Take a piece of AlGaN-based deep ultraviolet LED epitaxial wafer, put it in a concentration of 98% H 2 SO 4 with a mass percent concentration of 30% H 2 o 2 The mixed solution with a volume ratio of 3:1 was heated to 120°C and soaked for 20 minutes, then rinsed with deionized water for 10 minutes, and finally dried with nitrogen to complete the sample cleaning.

[0050] The cleaned epitaxial wafer was placed on the sample holder of the electron beam evaporation table, and a 5nm Ni adhesive layer and a 30nm Al mirror layer were sequentially evaporated.

[0051] The sample was taken out, and a cylindrical pattern mask with a diameter of 1 μm and a duty ratio of 1:1 was prepared by the nanosphere mask method.

[0052] Put the epitaxial wafer with the nanosphere mask into the electron beam evaporation station, and evaporate a 100nm Al three-dimensional composite functional layer.

[0053] Take out the sample, go through conventional processes such as glue removal and cl...

Embodiment 2

[0055] Take a piece of AlGaN-based deep ultraviolet LED epitaxial wafer, put it in a concentration of 98% H 2 SO 4 with a mass percent concentration of 30% H 2 o 2 The mixed solution with a volume ratio of 3:1 was heated to 120°C and soaked for 20 minutes, then rinsed with deionized water for 10 minutes, and finally dried with nitrogen to complete the sample cleaning.

[0056] The cleaned epitaxial wafer was placed on the sample holder of the electron beam evaporation table, and a 20nm Pt adhesive layer and a 10nm Ti mirror layer were evaporated sequentially.

[0057] The sample was taken out, and a quadrangular prism (cuboid) mask with a length of 400 nm, a height of 500 nm, and a duty ratio of 1:0.5 was prepared by nanoimprinting.

[0058] Put the masked sample into the magnetron sputtering station, and sputter a 500nm Al three-dimensional composite functional layer.

[0059] Take out the sample, go through conventional processes such as glue removal and cleaning, and pu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a composite functional P type electrode of a deep ultraviolet LED of a vertical structure and a preparation method. According to the preparation method, a bonding layer and a reflector layer are sequentially prepared on the P surface of a cleaned AlGaN-based deep ultraviolet epitaxial wafer through electron beam evaporation or magnetron sputtering; a three-dimensional functional pattern mask is prepared by using a photoetching, nano-imprinting or nano-ball mask method; and a three-dimensional composite functional layer is prepared; and after cleaning is performed, a filling layer, an isolation layer and an electrode layer are sequentially prepared. The composite functional P type electrode prepared by using the preparation method can be used for AlGaN-based deep ultraviolet LEDs of a vertical structure and an inverted structure, and therefore, highly-efficient deep ultraviolet wave band reflectance can be realized, support can be provided for an epitaxial layerduring laser stripping, and stress non-destructive release can be realized.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a composite function P-type electrode of a vertical structure deep ultraviolet LED and a preparation method thereof. Background technique [0002] AlGaN-based deep ultraviolet light sources have broad application prospects in many fields such as optical storage, chemical analysis, biotechnology, medical sterilization, photolithography, polymer curing, and non-line-of-sight communication. Compared with the current relatively mature GaN-based blue light-emitting devices, the luminous efficiency and output power of the current shorter-wavelength deep-ultraviolet light-emitting devices are much lower. Due to poor epitaxial quality and low doping efficiency, it leads to difficulties in electric injection, weak luminescence, carrier congestion and severe heat generation. [0003] At present, many research institutions have used the flip-chip structure to prepare Al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/38H01L33/40B82Y30/00B82Y40/00
Inventor 李虞锋云峰张维涵
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com