A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method

A composite function, vertical structure technology, applied in circuits, electrical components, nanotechnology for materials and surface science, etc. Laser lift-off yield, good adhesion and support, the effect of reducing the threshold energy density

Active Publication Date: 2019-04-12
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to poor epitaxial quality and low doping efficiency, it leads to difficulties in electric injection, weak luminescence, carrier congestion and severe heat generation.
[0003] At present, many research institutions have used the flip-chip structure to prepare AlGaN-based deep ultraviolet chips. Although the light output has improved, there is still a phenomenon of current congestion.
The vertical structure can effectively overcome the problems of light extraction and current diffusion, but the laser lift-off of the sapphire substrate / AlN epitaxial layer is a difficult problem: the traditional deep ultraviolet LED electrodes cannot provide sufficient support during laser lift-off, resulting in the epitaxial layer being in Cracks when peeled off; while the reflective mirror electrode system using GaN-based blue LEDs, the electrode material has a high absorption of deep ultraviolet light

Method used

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  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method
  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method
  • A composite function p-type electrode of vertical structure deep ultraviolet LED and its preparation method

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preparation example Construction

[0039] like figure 1 , Figure 2a , Figure 2b , Figure 3a , Figure 3b , Figure 4a , Figure 4b , Figure 5a , Figure 5b , Figure 6a and Figure 6b As shown, the preparation method of the composite function P-type electrode of a kind of vertical structure deep ultraviolet LED provided by the present invention comprises the following steps:

[0040] The first step is to grow an AlGaN-based deep ultraviolet LED epitaxial structure on a sapphire substrate, and perform in-situ annealing after the growth is completed to realize carrier activation;

[0041] In the second step, the grown AlGaN-based deep ultraviolet LED epitaxial wafer 1 was treated with H 2 SO 4 with H 2 o 2 The mixed solution is heated, then rinsed and dried;

[0042] In the third step, the surface of the P-type layer of the AlGaN-based deep ultraviolet LED epitaxial wafer obtained in the second step after cleaning is prepared through an electron beam evaporation platform or a magnetron sputterin...

Embodiment 1

[0049] Take a piece of AlGaN-based deep ultraviolet LED epitaxial wafer, put it in a concentration of 98% H 2 SO 4 with a mass percent concentration of 30% H 2 o 2 The mixed solution with a volume ratio of 3:1 was heated to 120°C and soaked for 20 minutes, then rinsed with deionized water for 10 minutes, and finally dried with nitrogen to complete the sample cleaning.

[0050] The cleaned epitaxial wafer was placed on the sample holder of the electron beam evaporation table, and a 5nm Ni adhesive layer and a 30nm Al mirror layer were sequentially evaporated.

[0051] The sample was taken out, and a cylindrical pattern mask with a diameter of 1 μm and a duty ratio of 1:1 was prepared by the nanosphere mask method.

[0052] Put the epitaxial wafer with the nanosphere mask into the electron beam evaporation station, and evaporate a 100nm Al three-dimensional composite functional layer.

[0053] Take out the sample, go through conventional processes such as glue removal and cl...

Embodiment 2

[0055] Take a piece of AlGaN-based deep ultraviolet LED epitaxial wafer, put it in a concentration of 98% H 2 SO 4 with a mass percent concentration of 30% H 2 o 2 The mixed solution with a volume ratio of 3:1 was heated to 120°C and soaked for 20 minutes, then rinsed with deionized water for 10 minutes, and finally dried with nitrogen to complete the sample cleaning.

[0056] The cleaned epitaxial wafer was placed on the sample holder of the electron beam evaporation table, and a 20nm Pt adhesive layer and a 10nm Ti mirror layer were evaporated sequentially.

[0057] The sample was taken out, and a quadrangular prism (cuboid) mask with a length of 400 nm, a height of 500 nm, and a duty ratio of 1:0.5 was prepared by nanoimprinting.

[0058] Put the masked sample into the magnetron sputtering station, and sputter a 500nm Al three-dimensional composite functional layer.

[0059] Take out the sample, go through conventional processes such as glue removal and cleaning, and pu...

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Abstract

The invention discloses a composite functional P type electrode of a deep ultraviolet LED of a vertical structure and a preparation method. According to the preparation method, a bonding layer and a reflector layer are sequentially prepared on the P surface of a cleaned AlGaN-based deep ultraviolet epitaxial wafer through electron beam evaporation or magnetron sputtering; a three-dimensional functional pattern mask is prepared by using a photoetching, nano-imprinting or nano-ball mask method; and a three-dimensional composite functional layer is prepared; and after cleaning is performed, a filling layer, an isolation layer and an electrode layer are sequentially prepared. The composite functional P type electrode prepared by using the preparation method can be used for AlGaN-based deep ultraviolet LEDs of a vertical structure and an inverted structure, and therefore, highly-efficient deep ultraviolet wave band reflectance can be realized, support can be provided for an epitaxial layerduring laser stripping, and stress non-destructive release can be realized.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a composite function P-type electrode of a vertical structure deep ultraviolet LED and a preparation method thereof. Background technique [0002] AlGaN-based deep ultraviolet light sources have broad application prospects in many fields such as optical storage, chemical analysis, biotechnology, medical sterilization, photolithography, polymer curing, and non-line-of-sight communication. Compared with the current relatively mature GaN-based blue light-emitting devices, the luminous efficiency and output power of the current shorter-wavelength deep-ultraviolet light-emitting devices are much lower. Due to poor epitaxial quality and low doping efficiency, it leads to difficulties in electric injection, weak luminescence, carrier congestion and severe heat generation. [0003] At present, many research institutions have used the flip-chip structure to prepare Al...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/38H01L33/40B82Y30/00B82Y40/00
Inventor 李虞锋云峰张维涵
Owner XI AN JIAOTONG UNIV
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