Semiconductor structure, preparation method thereof, self-supporting gallium nitride layer and preparation method thereof

Abstract

The invention relates to a semiconductor structure, a preparation method thereof, a self-supporting gallium nitride layer and a preparation method thereof. The preparation method of the semiconductorstructure comprises the steps of providing a substrate; forming a nitride buffer layer on the substrate; and forming a multi-layer graphical mask layer on the nitride buffer layer, wherein materials of a bottom graphical mask layer in the multi-layer graphical mask layer comprise at least one of silicon-based oxide, silicon-based nitride, metal oxide and metal nitride, and the top graphical mask layer is a graphical metal mask layer. According to the invention, self-stripping of the gallium nitride layer formed on the multi-layer graphical mask layer is facilitated; the quality of the galliumnitride layer formed on the multi-layer graphical mask layer is ensured; and the problem of influence on the quality of the gallium nitride layer due to cracking caused by only partial stripping in the stripping process in stripping of the metal mask layer is solved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor structure of a multilayer mask, a self-supporting gallium nitride layer and a preparation method thereof. Background technique [0002] Gallium nitride, as a typical third-generation semiconductor material, has attracted extensive attention due to its excellent properties such as wide bandgap and high thermal conductivity. Compared with the first-generation and second-generation semiconductor materials, Gallium Nitride has a wider forbidden band (3.4eV at room temperature), can emit blue light with a shorter wavelength, and has a high breakdown voltage. , high electron mobility, stable chemical properties, high temperature resistance and corrosion resistance. Therefore, gallium nitride is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices as well as blue, green and ultraviolet optoelectro...

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Problems solved by technology

[0003] The currently used lift-off processes mainly include laser lift-off, self-stripping, mechanical lift-off, and chemical etching lift-off; however, the existing laser lift-off process, mechanical lift-off process, and chemical etching process all need to perform additional steps after the GaN growth process is completed. The advanced stripping process increases the process steps and process complexity, thereby increasing the cost. At the same time, the laser lift-off process, mechanical lift-off process and chemical corrosion lift-off process all have strict requirements on heterogeneous substrates, and the universality is poor; Although some self-stripping processes can realize the self-stripping of heterogeneous substrates and gallium nitride, the quality of gallium nitride will be affected during the stripping process, and the yield rate is low

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