Semiconductor structure, preparation method thereof, self-supporting gallium nitride layer and preparation method thereof

A technology of gallium nitride layer and gallium nitride buffer layer, applied in the semiconductor structure of multi-layer mask, self-supporting gallium nitride layer and its preparation field, can solve the problem of increasing process steps and process complexity, harshness, and increased cost And other issues

Pending Publication Date: 2020-06-02
镓特半导体科技(上海)有限公司
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Problems solved by technology

[0003] The currently used lift-off processes mainly include laser lift-off, self-stripping, mechanical lift-off, and chemical etching lift-off; however, the existing laser lift-off process, mechanical lift-off process, and chemical etching process all need to perform additional steps after the GaN growth process is completed. The advanced stripping process increases the process steps and process complexity, thereby increasing th

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  • Semiconductor structure, preparation method thereof, self-supporting gallium nitride layer and preparation method thereof

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[0069] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0070] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to and integrally integrated with the other element, or there may be an intervening element at the same time. The terms "mounted", "one end", "the other end" and similar expressions are used herein for the purpose of description only.

[0071] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commo...

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Abstract

The invention relates to a semiconductor structure, a preparation method thereof, a self-supporting gallium nitride layer and a preparation method thereof. The preparation method of the semiconductorstructure comprises the steps of providing a substrate; forming a nitride buffer layer on the substrate; and forming a multi-layer graphical mask layer on the nitride buffer layer, wherein materials of a bottom graphical mask layer in the multi-layer graphical mask layer comprise at least one of silicon-based oxide, silicon-based nitride, metal oxide and metal nitride, and the top graphical mask layer is a graphical metal mask layer. According to the invention, self-stripping of the gallium nitride layer formed on the multi-layer graphical mask layer is facilitated; the quality of the galliumnitride layer formed on the multi-layer graphical mask layer is ensured; and the problem of influence on the quality of the gallium nitride layer due to cracking caused by only partial stripping in the stripping process in stripping of the metal mask layer is solved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor structure of a multilayer mask, a self-supporting gallium nitride layer and a preparation method thereof. Background technique [0002] Gallium nitride, as a typical third-generation semiconductor material, has attracted extensive attention due to its excellent properties such as wide bandgap and high thermal conductivity. Compared with the first-generation and second-generation semiconductor materials, Gallium Nitride has a wider forbidden band (3.4eV at room temperature), can emit blue light with a shorter wavelength, and has a high breakdown voltage. , high electron mobility, stable chemical properties, high temperature resistance and corrosion resistance. Therefore, gallium nitride is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices as well as blue, green and ultraviolet optoelectro...

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Application Information

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IPC IPC(8): H01L21/02H01L29/20
CPCH01L21/02458H01L21/02505H01L21/0254H01L21/02576H01L21/0262H01L29/2003
Inventor 王颖慧特洛伊·乔纳森·贝克罗晓菊
Owner 镓特半导体科技(上海)有限公司
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