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Semiconductor structure, self-supporting gallium nitride layer and method of making same

A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor universality, cracking of gallium nitride epitaxial layer, high requirements, etc., to reduce stress and improve growth quality effect

Active Publication Date: 2019-08-13
镓特半导体科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, laser lift-off technology is often used to separate gallium nitride grown on sapphire substrates. However, laser lift-off has high requirements on the flatness of gallium nitride crystals, and it is not easy to lift off larger-sized gallium nitride crystals; self-lift-off technology The stress generated by the thermal mismatch acts on the specific connection between the epitaxial GaN crystal and the heterogeneous substrate to make the epitaxial layer and the template fracture and separate. However, the thermal stress generated in the existing self-stripping process often causes the nitride The gallium epitaxial layer is broken, or the epitaxial layer cannot be peeled off. The self-stripping technology has high requirements for the growth process of the gallium nitride crystal, the design and production of the patterned substrate, and the yield of a complete gallium nitride crystal obtained by self-stripping is low; Mechanical stripping is the use of mechanical grinding to remove foreign substrates. However, mechanical stripping is suitable for low hardness and fragile foreign substrates; chemical etching stripping uses chemical agents that can remove foreign substrates and are not easy to corrode gallium nitride. To remove the foreign substrate on the back, chemical stripping requires the thermal stability of the foreign substrate to be good and easy to corrode
It can be seen from the above that the laser lift-off process, the mechanical lift-off process and the chemical etching lift-off process all need to perform an additional lift-off process after the gallium nitride growth process is completed, which increases the process steps and process complexity, thereby increasing the cost. At the same time, the laser lift-off process, mechanical stripping process, and chemical etching stripping process all have strict requirements on heterogeneous substrates, and their universality is poor; although the existing self-stripping process can realize self-striping of heterogeneous substrates and gallium nitride, the stripping The quality of gallium nitride will be affected during the process, and the yield rate is low

Method used

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  • Semiconductor structure, self-supporting gallium nitride layer and method of making same
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Embodiment 1

[0072] see figure 1 , the invention provides a method for preparing a semiconductor structure, the method for preparing a semiconductor structure includes the following steps:

[0073] 1) Provide the substrate;

[0074] 2) forming a superlattice structure decomposition layer on the upper surface of the substrate, and the superlattice structure decomposition layer includes at least gallium element;

[0075] 3) forming a patterned mask layer on the upper surface of the superlattice structure decomposition layer; several openings are formed in the patterned mask layer, and the openings expose part of the superlattice structure decomposition layer;

[0076] 4) Process the structure obtained in step 3) to decompose and reconstruct the superlattice structure decomposition layer to obtain a decomposition and reconstruction stack, wherein the decomposition and reconstruction stack includes the reconstruction of several holes formed inside a decomposed layer and a gallium nitride see...

Embodiment 2

[0129] Please combine Figure 1 to Figure 9 refer to Figure 10 to Figure 11 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 1. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 1, a method for forming nitrogen on the upper surface of the substrate 10 is added between step 1) and step 2) of the preparation method described in Example 1. The step of forming the aluminum nitride layer 15, the aluminum nitride layer 15 is located between the substrate 10 and the superlattice structure decomposition layer 11; that is, the aluminum nitride layer is first formed on the upper surface of the substrate 10 layer 15, and then form the superlattice structure decomposition layer 11 on the upper surface of the alumin...

Embodiment 3

[0135] Please combine Figure 10 and Figure 11 refer to Figure 12 to Figure 13 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 2. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 2, the preparation method described in Example 2 is also included on the superlattice structure decomposition layer 11 between step 2) and step 3). The step of forming a decomposition barrier layer 16 on the surface, the decomposition barrier layer 16 is located between the superlattice structure decomposition layer 11 and the patterned mask layer 12; The decomposition barrier layer 16 is formed on the upper surface, and then the patterned mask layer 12 is formed on the upper surface of the decomposition barrier layer 16 . ...

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Abstract

The invention provides a semiconductor structure, a self-supporting gallium nitride layer and preparation methods thereof. The preparation method of the semiconductor structure comprises the following steps: (1) providing a substrate; (2) forming a superlattice structure decomposed layer on the upper surface of the substrate, wherein the superlattice structure decomposed layer at least comprises gallium element; (3) forming a graphical mask layer on the upper surface of the structure obtained in the step (2); (4) processing the structure obtained in the step (3), so that the superlattice structure decomposed layer is decomposed and reconstructed so as to obtain a decomposed and reconstructed laminate; and (5) forming a buffer layer on the upper surface of the structure obtained in the step (4). When the semiconductor structure prepared in the invention is used for growing gallium nitride, gallium nitride crystal seed layers in the decomposed and reconstructed laminate can be used for providing crystal seeds for subsequent gallium nitride growth, and holes inside the decomposed and reconstructed laminate are beneficial for automatic peeling for the subsequently grown gallium nitride and also can be used for reducing the stress among subsequently grown gallium nitride crystal lattices, so that the growth quality of gallium nitride can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof. Background technique [0002] The third-generation semiconductor materials are also called wide-bandgap semiconductors because their energy bandgap is generally greater than 3.0 electron volts. Compared with traditional silicon-based and gallium arsenide-based semiconductor materials, wide-bandgap semiconductors (such as silicon carbide, gallium nitride, aluminum nitride, and indium nitride, etc.) have unique bandgap ranges, excellent optical and electrical properties The properties and excellent material properties can meet the working requirements of high-power, high-temperature, high-frequency and high-speed semiconductor devices, and have a wide range of applications in the automotive and aviation industries, medical care, communications, military, general l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/324H01L21/78
CPCH01L21/02458H01L21/02513H01L21/02658H01L21/02694H01L21/3245H01L21/7813
Inventor 罗晓菊王颖慧
Owner 镓特半导体科技(上海)有限公司
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