Semiconductor structure, self-supporting gallium nitride layer and method of making same
A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor universality, cracking of gallium nitride epitaxial layer, high requirements, etc., to reduce stress and improve growth quality effect
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Embodiment 1
[0072] see figure 1 , the invention provides a method for preparing a semiconductor structure, the method for preparing a semiconductor structure includes the following steps:
[0073] 1) Provide the substrate;
[0074] 2) forming a superlattice structure decomposition layer on the upper surface of the substrate, and the superlattice structure decomposition layer includes at least gallium element;
[0075] 3) forming a patterned mask layer on the upper surface of the superlattice structure decomposition layer; several openings are formed in the patterned mask layer, and the openings expose part of the superlattice structure decomposition layer;
[0076] 4) Process the structure obtained in step 3) to decompose and reconstruct the superlattice structure decomposition layer to obtain a decomposition and reconstruction stack, wherein the decomposition and reconstruction stack includes the reconstruction of several holes formed inside a decomposed layer and a gallium nitride see...
Embodiment 2
[0129] Please combine Figure 1 to Figure 9 refer to Figure 10 to Figure 11 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 1. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 1, a method for forming nitrogen on the upper surface of the substrate 10 is added between step 1) and step 2) of the preparation method described in Example 1. The step of forming the aluminum nitride layer 15, the aluminum nitride layer 15 is located between the substrate 10 and the superlattice structure decomposition layer 11; that is, the aluminum nitride layer is first formed on the upper surface of the substrate 10 layer 15, and then form the superlattice structure decomposition layer 11 on the upper surface of the alumin...
Embodiment 3
[0135] Please combine Figure 10 and Figure 11 refer to Figure 12 to Figure 13 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 2. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 2, the preparation method described in Example 2 is also included on the superlattice structure decomposition layer 11 between step 2) and step 3). The step of forming a decomposition barrier layer 16 on the surface, the decomposition barrier layer 16 is located between the superlattice structure decomposition layer 11 and the patterned mask layer 12; The decomposition barrier layer 16 is formed on the upper surface, and then the patterned mask layer 12 is formed on the upper surface of the decomposition barrier layer 16 . ...
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