Semiconductor structure, self-supporting gallium nitride layer and preparation methods thereof
A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor universality, low yield, increased process steps and process complexity, etc., to improve growth quality , the effect of reducing stress
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[0071] Example 1
[0072] see figure 1 , the present invention provides a preparation method of a semiconductor structure, the preparation method of the semiconductor structure comprises the following steps:
[0073] 1) Provide a substrate;
[0074] 2) forming a superlattice structure decomposition layer on the upper surface of the substrate, and the superlattice structure decomposition layer at least includes gallium element;
[0075] 3) forming a patterned mask layer on the upper surface of the superlattice structure decomposition layer; a plurality of openings are formed in the patterned mask layer, and the openings expose part of the superlattice structure decomposition layer;
[0076] 4) Process the structure obtained in step 3) to decompose and reconstruct the superlattice structure decomposition layer to obtain a decomposed and reconstructed stack, wherein the decomposed and reconstructed stack includes a reconstruction in which several holes are formed inside a deco...
Example Embodiment
[0128] Embodiment 2
[0129] please combine Figure 1 to Figure 9 see Figures 10 to 11 , the present invention also provides a preparation method of a semiconductor structure. The preparation method of the semiconductor structure described in this embodiment is roughly the same as the preparation method described in Embodiment 1. The difference between the two is that the semiconductor structure of this embodiment is Compared with the preparation method described in Embodiment 1, between step 1) and step 2) of the preparation method described in Embodiment 1, an additional step is added to form nitrogen on the upper surface of the substrate 10 The step of forming the aluminum nitride layer 15, the aluminum nitride layer 15 is located between the substrate 10 and the superlattice structure decomposition layer 11; that is, the aluminum nitride layer is first formed on the upper surface of the substrate 10 layer 15 , and then the superlattice structure decomposition layer 11 i...
Example Embodiment
[0134] Embodiment 3
[0135] please combine Figure 10 and Figure 11 see Figure 12 to Figure 13 , the present invention also provides a preparation method of a semiconductor structure. The preparation method of the semiconductor structure described in this embodiment is substantially the same as the preparation method described in Embodiment 2. The difference between the two is that the semiconductor structure of this embodiment is Compared with the preparation method described in Embodiment 2, between step 2) and step 3) of the preparation method described in Embodiment 2, it is also included on the superlattice structure decomposition layer 11. The step of forming a decomposition barrier layer 16 on the surface, the decomposition barrier layer 16 is located between the superlattice structure decomposition layer 11 and the patterned mask layer 12; The decomposition barrier layer 16 is formed on the upper surface, and the patterned mask layer 12 is formed on the upper sur...
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