Semiconductor structure, self-supporting gallium nitride layer and preparation methods thereof
A gallium nitride layer and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor universality, low yield, increased process steps and process complexity, etc., to improve growth quality , the effect of reducing stress
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Embodiment 1
[0071] see figure 1 , the invention provides a method for preparing a semiconductor structure, the method for preparing a semiconductor structure includes the following steps:
[0072] 1) Provide the substrate;
[0073] 2) forming a decomposed layer containing gallium on the upper surface of the substrate;
[0074] 3) forming a patterned mask layer on the upper surface of the gallium-containing decomposition layer; several openings are formed in the patterned mask layer, and the openings expose part of the gallium-containing decomposition layer;
[0075] 4) Process the structure obtained in step 3) to decompose and reconstruct the gallium-containing decomposed layer to obtain a decomposed and reconstructed stack, wherein the decomposed and reconstructed stack includes a reconstructed decomposed layer with several holes formed inside and a gallium nitride seed layer located on the upper surface of the reconstitution decomposition layer exposed by the opening;
[0076] 5) For...
Embodiment 2
[0119] Please combine Figure 1 to Figure 9 refer to Figure 10 to Figure 11 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 1. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 1, a method for forming nitrogen on the upper surface of the substrate 10 is added between step 1) and step 2) of the preparation method described in Example 1. The step of forming the aluminum nitride layer 15, the aluminum nitride layer 15 is located between the substrate 10 and the gallium-containing decomposed layer 11; that is, the aluminum nitride layer 15 is first formed on the upper surface of the substrate 10 , and then form the gallium-containing decomposed layer 11 on the upper surface of the aluminum nitride layer 15...
Embodiment 3
[0125] Please combine Figure 10 and Figure 11 refer to Figure 12 to Figure 13 , the present invention also provides a method for preparing a semiconductor structure. The method for preparing a semiconductor structure described in this embodiment is substantially the same as the method described in Embodiment 2. The difference between the two is that the semiconductor structure of this embodiment Compared with the preparation method described in Example 2, the preparation method described in Example 2 also includes forming on the upper surface of the gallium-containing decomposition layer 11 between step 2) and step 3). The step of decomposing the barrier layer 16, the decomposing barrier layer 16 is located between the gallium-containing decomposing layer 11 and the patterned mask layer 12; barrier layer 16 , and then form the patterned mask layer 12 on the upper surface of the decomposition barrier layer 16 .
[0126] As an example, the decomposition barrier layer 16 ca...
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