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Device for dynamically controlling gas flow mode and wafer processing method and equipment

A dynamic control and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, discharge tubes, etc., can solve the problem that wafer etching cannot achieve better etching uniformity, and meet the needs of precise control and high productivity Effect

Active Publication Date: 2020-03-17
ADVANCED MICRO FAB EQUIP INC CHINA
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AI Technical Summary

Problems solved by technology

[0008] The existing technology can only make the gas shielding ring fixedly located at the above two positions, and cannot realize that the shielding ring stays in any position between the first position and the second position in real time, so that the etching of the wafer cannot be achieved. better etch uniformity

Method used

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  • Device for dynamically controlling gas flow mode and wafer processing method and equipment
  • Device for dynamically controlling gas flow mode and wafer processing method and equipment
  • Device for dynamically controlling gas flow mode and wafer processing method and equipment

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Embodiment Construction

[0024] The present invention will be further elaborated below by describing a preferred specific embodiment in detail in conjunction with the accompanying drawings.

[0025] The invention provides a device to adjust the chemical form in the processing chamber by changing the gas flow pattern in the processing chamber; Adjustment of wafer etching effect. The invention also provides a wafer processing method and wafer processing equipment using the device.

[0026] The invention provides a gas shielding ring whose height can be adjusted dynamically, which can change the gas flow pattern of the gas from the gas inlet to the vicinity of the surface area of ​​the wafer. In order to meet the requirements of the same or different processes, the adjustment of the height of the gas shielding ring in the present invention can be completed in the processing chamber with gas pressure, without opening the processing chamber during the process.

[0027] Such as figure 1 As shown, the gas...

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Abstract

The invention discloses a device for dynamically controlling a gas flow mode and a wafer processing method and equipment. Based on the plasma processing technology of a wafer placed in a processing cavity, the device is a gas shielding ring for the adjustment of a gas circulation mode in the processing cavity. The device comprises a moving ring which can be respectively located at a first positionor a second position or perform uniform linear motion or variable motion between the first position and the second position, and when the moving ring is located at the first position, reaction gas has first distribution and generates a first processing effect on a wafer; when the moving ring is located at the second position, the reaction gas has second distribution and generates a second processing effect on the wafer; in the whole plasma processing process, the running moving ring enables the wafer to have a third processing effect, and the third processing effect is between the first processing effect and the second processing effect. According to the invention, the control of the wafer processing technology is more accurate by dynamically adjusting the moving ring, and the productionefficiency is improved.

Description

technical field [0001] The invention relates to manufacturing equipment in the field of semiconductors, in particular to a device for dynamically controlling gas flow patterns, a wafer processing method and equipment. Background technique [0002] The etching of silicon wafers is dominated by chemical action, and the gas delivery and flow pattern in the processing chamber of the etching equipment will have a great influence on the etching performance. A gas shielding ring (shadow ring), which is widely used in processing chambers for etching silicon wafers, can change the gas flow pattern in the processing chamber based on the specific requirements of different etching processes. [0003] The most important parameters of the gas shielding ring for realizing the above gas flow and etching effect adjustment functions are the diameter of the middle opening of the gas shielding ring and the height of the gas shielding ring relative to the wafer surface. For example, a gas shiel...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01L21/67H01L21/3065
CPCH01J37/32449H01L21/67069H01L21/3065
Inventor 黄允文李俊良连增迪
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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