A kind of manufacturing method of semiconductor device and semiconductor device

Abstract

The invention provides a method for manufacturing a semiconductor device and the semiconductor device. The method includes: providing a semiconductor substrate, forming a first mask material layer on the semiconductor substrate; patterning the first mask material layer to form a first mask layer, the first mask exposing the area on the semiconductor substrate where the first metal layer is to be formed, the area where the first metal layer is to be formed includes a first part, and the first mask layer located at the first part is set as a discontinuous structure; with The first mask layer is used as a mask to etch the semiconductor substrate. According to the manufacturing method of the semiconductor device and the semiconductor device of the present invention, the mask forming the first metal layer is patterned to form a discontinuous mask, thereby cutting off the first metal layer, and the cut first metal layer is connected with the contact metal layer respectively. The plugs are contacted, so that the contact plugs are respectively connected to the external circuit one by one, and the contact metal plugs are effectively connected under the existing photolithography and etching process.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device and a semiconductor device. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, people have higher and higher requirements on the integration and performance of integrated circuits. In order to meet the ever-increasing integration requirements, the size of semiconductor devices is gradually reduced, and the key dimensions of semiconductor devices are currently developed to the 7nm node or even below. As the size of the semiconductor device decreases, the requirements for the interconnection structure of the semiconductor device are also increasing. [0003] In a typical interconnect structure, the source and drain of the transistor are usually connected to external circuits through a contact metal plug in contact with the source and drain of the transisto...

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Problems solved by technology

[0004] In a typical semiconductor device with a node of 14nm and below, such as an SRAM device, since the pitch between the contact metal plugs is 44nm, the first metal layer in the interconnection structure in the prior art has a metal pitch of 48nm (pitch ), and the first metal layer often adopts a continuous linear structure; it cannot realize the effective connection of the contact metal plug in the transistor to the external circuit

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