A silicon carbide-based reverse switching transistor and its preparation method

Abstract

The invention belongs to the technical field of pulsed power devices, and discloses a silicon carbide-based reverse switching transistor and a preparation method thereof. The transistor consists of silicon carbide N + type substrate (7), silicon carbide P base region (1), silicon carbide N ‑ Drift region (3) and anode emission region; the device adopts a positive bevel terminal; the device can pass through the cathode short-circuit point, that is, the silicon carbide cathode P + Region (8) conducts current. In the present invention, by improving the structure and preparation method of SiC RSD, the N + Type substrate is thinned, after which the N is periodically disconnected + cathode region, and inject P at the disconnect + Type high doping ions to form a cathode short circuit point, so as to realize the effective pre-filling process of RSD, and overcome the inability to well control the defects of the silicon carbide epitaxial wafer in the prior art when the device uses avalanche to establish a pre-filling plasma layer Being prematurely broken down, it is difficult to achieve effective pre-charge plasma layer establishment by utilizing avalanche breakdown.

Description

technical field [0001] The invention belongs to the technical field of pulsed power devices, and more specifically relates to a silicon carbide-based reverse switch transistor and a preparation method thereof, which is a structure and process of a wide bandgap semiconductor device, and the obtained silicon carbide reverse switch Transistors can be used in particular in the field of pulsed power technology. Background technique [0002] Pulse power technology plays a very important role in the fields of national defense and military affairs, and the pulse power switch is the core device of the pulse power system. The reverse switching transistor RSD (Reversely switched dynistor) is a pulsed power semiconductor switching device based on the principle of controllable plasma layer triggering, which can realize uniform and synchronous turn-on across the entire area. Compared with IGBT, SCR, etc., it has better voltage equalization characteristics. , higher withstand voltage and ...

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Problems solved by technology

[0007] In view of the above defects or improvement needs of the prior art, the object of the present invention is to provide a silicon carbide-based reverse switching transistor and its preparation method, wherein the detailed structure design of the device and the corresponding preparation method are improved, and the use of N after thinning + type substrate, and inject P at a certain distance from the cathode + Type highly doped ions to form a cathode short circuit point, that is, by pairing N + The type substrate is thinned, and then the N + The cathode region is disconnected, and P is injected at the disconnection + Type highly doped ions to form a cathode short-circuit point, which can realize the effective pre-filling process of RSD, and overcome the inability to well control the defects of the silicon carbide epitaxial wafer in the prior art, which causes the device to be blocked when the avalanche is used to establish the pre-filled plasma layer. Early breakdown, difficult to achieve effective pre-charge plasma layer establishment by utilizing avalanche breakdown

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