Topological bulk laser based on energy band inversion light field limiting effect and method

Abstract

The invention discloses a topological bulk laser based on an energy band inversion light field limiting effect and a method, being characterized in that a topological state photonic crystal which generates a dipole mode and a quadrupole mode near the center of a Brillouin zone and generates energy band reversing and a topological moderate state photonic crystal which does not generate energy bandreversing are adopted; the spliced boundary can generate reflection and limitation effects of a light field, and the boundary encircles to form a closed curve, so that a laser resonant cavity is formed in the boundary. According to the topological bulk laser based on an energy band inversion light field limiting effect and the method, single-mode vertical laser emission with high directivity, lowthreshold, narrow linewidth and high side-mode rejection ratio can be realized; the process difficulty and the preparation cost are reduced; the problems of heat dissipation and electric injection areimproved; the stability of components is improved, and the service life is prolonged; after copying to an electric injection active material system, the topological bulk laser based on an energy bandinversion light field limiting effect can obtain the vertical emitting laser with controllable size, high directivity, low threshold, narrow linewidth and high side mode rejection ratio; and the topological bulk laser based on an energy band inversion light field limiting effect can be applied to the fields of optical communication, solid-state lighting, laser radar, substance detection, medicaldiagnosis and the like.

Description

technical field [0001] The invention relates to semiconductor laser technology, in particular to a topological bulk laser based on the energy band inversion light field confinement effect and a control method thereof. Background technique [0002] With the rapid development of semiconductor laser science and related technological breakthroughs, the product quality, wavelength range and output power of semiconductor lasers are rapidly improving, and the product categories are becoming more and more abundant. Among them, the vertical cavity surface emitting laser has the advantages of small size, long life, high brightness, easy integration, and easy mass production. It has been widely used in the fields of laser printing, laser display, industrial sensing and medical diagnosis, especially in recent years. In 2019, application scenarios in emerging markets such as automobiles and consumer electronics terminals, such as face recognition and driverless driving, began to emerge, ...

AI Technical Summary

Problems solved by technology

However, the current practical vertical cavity surface emitting laser still faces the following problems: 1) In order to increase the output power of a single laser tube, it is usually necessary to increase the cross-sectional area of ​​the laser beam emitted from the element (ie, the exit area)

When the output area increases to a certain extent, the high-order oscillation mode begins to gain gain and form multi-mode lasing, which leads to problems such as reduced brightness of the laser and unstable modes; The electrical injection is difficult, especially when the device operates in the long wavelength range, a thicker DBR structure is required to provide effective optical field feedback, which brings greater challenges to the growth process and causes problems such as poor heat dissipation and reduced device life.

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