Semiconductor fabrication equipment

Abstract

A method of semiconductor fabrication includes positioning a substrate on a susceptor in a chamber and growing an epitaxial feature on the substrate. The growing includes providing UV radiation to a first region of a surface of the substrate and while providing the UV radiation, growing a first portion of the epitaxial feature on the first region of the surface while concurrently growing a secondportion of the epitaxial feature on a second region of the surface of the substrate. The first portion of the epitaxial feature can be greater in thickness than the second portion of the epitaxial feature.

Description

technical field [0001] Embodiments of the present disclosure relate to a semiconductor manufacturing equipment, a method of manufacturing a semiconductor, and a method of manufacturing a semiconductor device. Background technique [0002] The semiconductor integrated circuit (integrated circuit, IC) industry has experienced rapid growth. Technological advances in integrated circuit materials and design have produced generations of integrated circuits, with each generation of integrated circuits having smaller and more complex circuits than the previous generation. However, such advances have increased the complexity of producing and fabricating integrated circuits, and, to achieve such advances, similar developments in producing and fabricating integrated circuits have been required. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) generally increases as geometry size (ie, the smallest element (or line)...

AI Technical Summary

Problems solved by technology

Although existing methods and apparatus for growing epitaxial materials on wafers are generally suitable for the intended purpose, not all existing methods and apparatus are completely satisfactory in all respects.

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