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ANSYS-based MMC sub-module crimping type IGBT short-term failure analysis method

A failure analysis and sub-module technology, which is applied in the directions of instruments, design optimization/simulation, and electrical digital data processing, etc., can solve the problems of lack of quantitative evaluation of power module reliability and the lack of power module failure analysis, and achieve reduction The effect of calculation volume

Active Publication Date: 2020-05-01
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
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  • Claims
  • Application Information

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Problems solved by technology

However, there is a lack of quantitative evaluation of the reliability of the power module, and there is not much involved in the failure analysis of the power module under different time scales in the physical process.

Method used

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  • ANSYS-based MMC sub-module crimping type IGBT short-term failure analysis method
  • ANSYS-based MMC sub-module crimping type IGBT short-term failure analysis method

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Experimental program
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Embodiment Construction

[0022] The present invention will be further described below in conjunction with embodiment:

[0023] The structure of the press-fit IGBT module is complex, and there is coupling between multiple physical fields. In a short time scale, the failure of the press-fit IGBT module mainly involves the coupling between the electric field and the temperature field. The simulation process is as follows: figure 1 shown, including the following steps:

[0024] Step 1: Use Simplorer of ANSYS to obtain the loss of the MMC sub-module press-fit IGBT module under working conditions;

[0025] Build the MMC system in the simplorer, simplify the three-phase circuit to single-phase for research, first conduct simulation research on the working conditions of the ideal device, and then modify one of the SM sub-modules to an actual IGBT device including dynamic and static parameters, and then add The parasitic parameters extracted by Q3D approach the actual operating conditions step by step. In th...

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Abstract

The invention discloses an ANSYS-based MMC (modular multilevel converter) sub-module crimping type IGBT (insulated gate bipolar transistor) short-term failure analysis method. The method includes thefollowing steps that: step 1, the loss of an MMC sub-module crimping type IGBT under a working condition is obtained by using the Simpler of ANSYS; step 2, utilizing SpaceClaim of ANSYS to establish an IGBT (Insulated Gate Bipolar Transistor) model; 3, performing Foster network extraction on the IGBT model obtained in the step 2 through an Icepak and a Simpler of ANSYS; and 4, importing the loss calculated in the step 1 into the Foster network extracted in the step 3 to obtain the real-time temperature change condition of each position in the IGBT. According to the method, the main factors ofMMC sub-module crimping type IGBT failure in a short time scale can be grasped, and the accurate distribution condition of the IGBT internal temperature under the working condition can be obtained step by step.

Description

technical field [0001] The invention belongs to the field of flexible direct current transmission, and in particular relates to a short-term failure analysis method of an MMC sub-module crimping type IGBT based on ANSYS. Background technique [0002] In flexible HVDC transmission, the modular multilevel converter (MMC), as a kind of multilevel converter, has been widely used. Compared with other multilevel converters, the MMC topology has many advantages such as high waveform quality, strong fault handling capability, and low loss, and is the first topology for flexible DC transmission. But in the application process of MMC, some problems appear and need to be solved. The IGBT power module is a key component of the MMC, and its working reliability is the key to the operation reliability of the overall MMC system. According to statistics, more than 35% of converter system failures are due to failure of power modules. Due to the relatively weak research on the reliability o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G06F119/02
CPCY02E60/60
Inventor 何智鹏刘智侯婷姬煜轲李岩许树楷马定坤郭伟力王来利
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
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