display device
A technology of display device and display area, which is applied to identification devices, static indicators, instruments, etc., can solve the problems of lower display quality, uneven image, poor signal delay or passivation, etc.
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no. 1 Embodiment approach
[0056] [1. Overall structure]
[0057] The structure of the display device 100 according to one embodiment of the present invention will be described. figure 1 A schematic top view of the display device 100 is shown. The display device 100 has a substrate 102 on which various insulating films, semiconductor films, and conductive films are patterned. By appropriately combining these films, a plurality of pixels 104 can be formed and drive circuits (scanning line side drive circuit 108 , signal line side drive circuit 110 ) for driving the pixels 104 can be formed. Each pixel 104 is a minimum unit for providing color information, and is an area including a light-emitting element OLED or a pixel circuit for driving it, as will be described later. A plurality of pixels 104 are arranged in a plurality of rows (1st to nth rows. n is a natural number greater than 1.) and a plurality of columns (1st to mth columns. m is a natural number greater than 1.), and the definition display ...
no. 2 Embodiment approach
[0097] In this embodiment, the method for manufacturing the display device 100 uses Figure 14A to Figure 18B Be explained. In each of these figures, the figure on the left represents the pixel 104 with Figure 4 Part of the section view corresponds to. On the other hand, the figure on the right is a cross-sectional view of the notch 114, and Figure 8 correspond. Descriptions of the same or similar configurations as those of the first embodiment are sometimes omitted.
[0098] An undercoat layer 150 and a light shielding film 152 are formed on the substrate 102 . Here, the undercoat layer 150 represents an example having the three-layer structure described in the first embodiment. Specifically, first, the light-shielding film 152 is formed after the film 150a containing silicon oxide is formed on the substrate 102 . After that, films including the silicon nitride-containing film 150b and the silicon oxide-containing film 150c are sequentially formed. The silicon oxide-...
no. 3 Embodiment approach
[0116] In this embodiment, a display device 200 having a structure different from that of the display device 100 will be described. The description of the same or similar contents as those described in the first and second embodiments may be omitted.
[0117] In the display device 100 , in order to adjust the driving load applied to the first to k-th scanning lines 140 , an adjustment film 144 is provided in the notch 114 . The adjustment film 144 exists in the same layer as the semiconductor film of the transistor in the pixel circuit. In contrast, the display device 200 such as Figure 19 As shown, a part of the high-potential power supply line 120 overlaps all or a part of the first to k-th scanning lines 140 instead of the adjustment film 144 , which is different from the display device 100 . In other words, the metal film that is a part of the high-potential power supply line 120 overlaps all or a part of the first to k-th scanning lines 140 , thereby applying an adjust...
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