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An Infrared Absorber Based on Bias Voltage Regulation

An infrared absorption and absorption unit technology, applied in the field of infrared absorbers, can solve the problems of narrow absorption frequency band and difficult broadband absorption, etc., to achieve the effect of absorption

Active Publication Date: 2022-07-29
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current mid-infrared absorber has a narrow absorption frequency band, and it is difficult to achieve broadband absorption

Method used

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  • An Infrared Absorber Based on Bias Voltage Regulation
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  • An Infrared Absorber Based on Bias Voltage Regulation

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Experimental program
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Embodiment approach

[0036] As an embodiment of the present invention, the upper substrate 1 is a doped silicon substrate.

[0037] As an embodiment of the present invention, the lower substrate 4 is a silicon dioxide substrate.

[0038] figure 2 is the absorption spectrum curve obtained by the simulation software when the x-polarized wave is vertically incident under different liquid crystal dielectric constants. When the dielectric constant of the liquid crystal is 2.4, the absorption rate for incident waves in the wavelength range of 11.21 to 12.13 μm is greater than 60%; when the dielectric constant of the liquid crystal is 3.8, the absorption rate for incident waves in the whole frequency band is 20% the following.

[0039] image 3 is the absorption spectrum curve obtained by the simulation software when the y-polarized wave is vertically incident under different liquid crystal dielectric constants. When the dielectric constant of the liquid crystal is 2.4, the absorptivity of the incid...

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Abstract

The invention discloses an infrared absorber based on bias voltage regulation. The infrared absorber comprises: n absorption units, which are arranged in an array; each absorption unit includes an upper substrate, a lower substrate, a liquid crystal layer, and a trapezoidal grating and metal base; the metal base is used for conducting electricity and is used as the lower electrode; the lower substrate is located above the metal base and is used as the base material of the trapezoidal grating; Absorption; the liquid crystal layer is located between the upper substrate and the lower substrate, which is used to form a bias electric field, thereby changing the dielectric constant, and realizing the tuning of the infrared wave absorption frequency band; the upper substrate is located above the liquid crystal layer, which is used for conduction and serves as the upper electrode. The invention realizes the absorption of the mid-infrared wave band by arranging the absorption unit array composed of the upper substrate, the lower substrate, the liquid crystal layer, the trapezoidal grating and the metal base.

Description

technical field [0001] The invention relates to the field of broadband absorption, in particular to an infrared absorber based on bias voltage regulation. Background technique [0002] Infrared waves refer to electromagnetic waves with wavelengths ranging from 1 to 500 μm. Because infrared waves, especially mid-infrared waves, have many excellent properties, they have important application prospects in practical applications such as medical imaging, security inspection, and product testing. The absorption frequency band of the current mid-infrared absorber is narrow, and it is difficult to achieve broadband absorption. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to provide an infrared absorber based on bias voltage regulation to realize broadband absorption in the mid-infrared band. [0004] In order to achieve the above object, the present invention provides an infrared absorber based on bias voltage regulation, and the infrared absorber in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1335
CPCG02F1/133514
Inventor 邓光晟孙寒啸吕坤杨军尹治平
Owner HEFEI UNIV OF TECH