Check patentability & draft patents in minutes with Patsnap Eureka AI!

Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance

A memory, semiconductor technology, applied to equipment and fields for identifying memory devices sharing external resistance of semiconductor devices, capable of solving problems such as reduction in data transmission speed, set/hold failure, data distortion, etc.

Pending Publication Date: 2020-06-16
MICRON TECH INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If impedance mismatch occurs, the transmission speed of data decreases and data from semiconductor devices may become distorted
Therefore, in the case where the semiconductor device receives distorted data, there may be problems due to set / hold failure or error in reading the received data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance
  • Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance
  • Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] To alleviate these problems that occur due to impedance mismatches, memory devices can include programmable termination elements that can be used to provide adjustable on-chip terminators and adjustable output driver impedance. For example, on-chip terminators may be adjusted to reduce impedance mismatches when providing signals (eg, commands, data, etc.) to the memory device. The programmable termination assembly has an impedance value that can be adjusted as operating conditions change. In some implementations, the programmable termination assembly is calibrated to a known impedance, which may be based on voltage measurements taken on circuit nodes coupled to external resistors.

[0018] Calibration of the programmable terminal assembly typically occurs in response to memory commands provided to the memory device, for example, upon power-up, memory device reset, changing the frequency setpoint of memory device operation, or whenever a calibration process needs to be i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance are disclosed. A memory device of a semiconductor device may be set in an identificationmode and provide an identification request to other memory devices that are coupled to a common communication channel. The memory devices that are coupled to the common communication channel may share an external resistance, for example, for calibration of respective programmable termination components of the memory devices. The memory devices that receive the identification request set a respective identification flag which can be read to determine which memory devices share an external resistance with the memory device having the set identification mode.

Description

Background technique [0001] Semiconductor devices such as microcomputers, memories, gate arrays, and other devices include input / output pins and output circuits for transmitting data to other devices via buses, transmission lines formed on boards, and the like. Circuits responsible for data transmission in semiconductor devices include, for example, output buffers and drivers. For optimal transmission, the impedance of the transmitting device should match the impedance of the transmission network and the receiving device. [0002] As the operating speed of the electronic device increases, the swing of the transmitted signal decreases. However, as the signal swing width of the transmitted signal decreases, the adverse influence of external noise increases. If there is an impedance mismatch at the interface, external noise can affect the reflection characteristics of the output signal. Impedance mismatches are caused, inter alia, by external noise or noise on the supply volta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C7/10
CPCG11C7/10G11C7/1006G11C11/401G11C11/4063G11C29/022G11C29/028G11C2029/4402H03K19/018585G11C2207/2254G11C7/04G06F13/4086H03K19/0005Y02D10/00G11C7/1048G11C29/50008G11C29/02G11C7/02
Inventor D·甘斯
Owner MICRON TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com