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Epitaxial structure and its preparation method, LED

A technology of epitaxial structure and defects, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as defects

Active Publication Date: 2020-06-19
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an epitaxial structure and its preparation method, and LED for the above-mentioned defects of the prior art, aiming at solving the problem of defects in the prior art when GaN grows on the sapphire substrate

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  • Epitaxial structure and its preparation method, LED
  • Epitaxial structure and its preparation method, LED
  • Epitaxial structure and its preparation method, LED

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] Please also see Figure 3-Figure 6 , the present invention provides some embodiments of an epitaxial structure.

[0036] It should be noted that, if figure 1 and figure 2 As shown, the epitaxial structure usually includes: a sapphire substrate 1, an undoped GaN layer (ie, a buffer layer 2), an N-type GaN layer 3, a stress release layer 4, and a light-emitting layer 5 (multiple quantum well layers can be used) arranged in sequence. , MQWs), EBL layer 6 (ie electron blocking layer, such as p-type AlGaN layer) and p-type GaN layer 7 . Because the GaN of the buffer layer 2 does n...

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Abstract

The invention discloses an epitaxial structure and its preparation method and LED. The epitaxial structure includes: a sapphire substrate, a GaN layer, a defect exposed layer, and a defect terminationlayer arranged in order. After preparing the buffer layer (GaN layer) on the sapphire substrate, through the defect exposure layer, the defect in the buffer layer is expaned and exposed, and the direction of the defect is changed through the defect termination layer, and the defect is stopped expanding. Therefore, when the subsequent layer is continuously prepared on the defect termination layer,the subsequent layer will not form larger defects on the basis of the defects of the buffer layer.

Description

technical field [0001] The invention relates to the technical field of epitaxial structures, in particular to an epitaxial structure, a preparation method thereof, and an LED. Background technique [0002] Light-emitting diode (Light-emitting diode, LED) is a semiconductor electronic component that can emit light. It can be used in lighting, advertising billboards, mobile phone backlight, etc. through the composite light source composed of trivalent and pentavalent elements. Currently used The main material is InGaN, but at present, InGaN-based blue-green LEDs are grown on sapphire substrates (sapphire) through MOCVD machines, but because of the stacking of different materials (heterogeneous epitaxy), many defects (10 -9 ~10 -10 cm -2 ) in turn affects the recombination efficiency of electrons and holes and reduces the luminous efficiency of the overall component. That is to say, the epitaxy process is roughly divided into homogeneous epitaxy (material A grows on the subs...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/025H01L33/007H01L33/32H01L33/145H01L33/24H01L33/20H01L33/0095H01L33/325
Inventor 杨顺贵
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD