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Trench isolation

A technology for isolating trenches and conductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as undesired floating and short circuits.

Inactive Publication Date: 2003-07-02
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These steps have the potential to trap conductive material in undesired areas during subsequent processing, causing short circuits

Method used

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Examples

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Embodiment Construction

[0018] In the prior art trench structure shown in FIG. 1 , a wafer 1 for making a semiconductor device has a layer of doped silicon (such as n-type silicon) covered on an inversion-doped silicon layer 3 (p-type silicon here). doped silicon) layer 2. The wafer has grooves 4 which are continuous or closed loops. Groove 4 has a U-shaped cross-section extending from the upper surface of wafer 1 through layer 2 to layer 3 . The groove 4 has insulating walls 5 made of eg silicon oxide and a polysilicon filler 6 between the groove walls 5 . Groove 4 extends along the boundary between n-type doped silicon island 7 and the remainder of n-type doped silicon 2 and isolates silicon island 7 from the remainder of n-type doped silicon 2 . The silicon island 7 can be used to fabricate one or more components (not shown), such as resistors, capacitors, diodes, transistors and other bipolar components. In the case of conductive foreign particles or impurities in the material (to simplify the...

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Abstract

An island (7) of material is provided with insulating means comprising a trench structure wherein the trench structure comprises a first insulating trench (4) surrounded by a second insulating trench (4') and said trenches are joined together by at least two transverse linking trenches (9).

Description

technical field [0001] The present invention relates to the structure of isolation trenches between semiconductor elements and to methods of making such trenches. Background technique [0002] To isolate individual components in integrated circuits, backfilled trench structures have been developed. There are different ways of making such trenches, which can be etched through the silicon layer down to the underlying buried insulating oxide, or through the silicon substrate to the underlying silicon layer with the opposite doping type to the lateral insulating layer . A method of making such a tank is described in Wolf, S., "Silicon Processing for the VLSI Era Volume II", pp45-56, ISBN-0-961 672-4-5, 1990, Lattice Press USA. [0003] A problem with using trenches to isolate components is that the small width of the trenches makes the trenches susceptible to foreign particles or impurities in the material, both of which may short circuit circuits intended to be electrically i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L21/763
CPCH01L21/763H01L21/76
Inventor A·K·S·瑟德贝里N·O·厄格伦E·H·舍丁O·M·扎克里森
Owner INFINEON TECH AG
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