Bonding wire for semiconductor devices
A bonding wire, semiconductor technology, applied in the manufacturing of semiconductor devices, conductors, semiconductor/solid-state devices, etc., can solve problems such as reduced bonding reliability
Pending Publication Date: 2020-07-14
NIPPON STEEL CHEMICAL CO LTD +1
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
When Cu corrosion occurs in a semiconductor device using a Cu bonding wire, the bonding reliability of the ball bonding portion in particular decreases
Method used
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Embodiment
[0077] Hereinafter, the bonding wire according to the embodiment of the present invention will be specifically described while showing examples.
[0078] (sample)
[0079] First, the preparation method of the sample will be described. As for Cu, which is a raw material of the core material, Cu having a purity of 99.99% by mass or higher and the remainder consisting of unavoidable impurities was used. For the first to fifth alloying element groups, elements having a purity of 99% by mass or higher and the remainder consisting of unavoidable impurities are used. In order to make the composition of the wire or the core material a target composition, the first to fifth alloy element groups are formulated as elements to be added to the core material. Regarding the addition of the first to fifth alloying element groups, it is possible to prepare a single substance, but in the case of a high melting point element or an extremely small amount of addition in a single substance, it is...
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Abstract
Provided is a Pd-coated Cu bonding wire for semiconductor devices with which sufficient joining reliability at a ball joining portion is obtained in high-temperature environments of 175deg C or highereven when the sulfur content in a mold resin used for a semiconductor device package increases. A bonding wire for semiconductor devices which has a Cu alloy core and a Pd-coating layer formed on thesurface of the Cu alloy core, contains therein 0.03-2 mass%, in total, of at least one of Ni, Rh, Ir, and Pd, and further contains therein 0.002-3 mass%, in total, of at least one of Li, Sb, Fe, Cr,Co, Zn, Ca, Mg, Pt, Sc, and Y. With use of the abovementioned bonding wire, sufficient joining reliability at a ball joining portion is obtained in high-temperature environments of 175 deg C or highereven when the sulfur content in a mold resin used for a semiconductor device package increases.
Description
technical field [0001] The present invention relates to a bonding wire for a semiconductor device for connecting electrodes on a semiconductor element to wiring on a circuit wiring board such as an external lead. Background technique [0002] At present, as a bonding wire for a semiconductor device (hereinafter referred to as "bonding wire") for bonding between an electrode on a semiconductor element and an external lead, a thin wire having a wire diameter of about 15 to 50 μm is mainly used. The bonding method of the bonding wire is generally a thermocompression bonding method using ultrasonic waves, and a general-purpose bonding device, a rivet jig in which the bonding wire is passed through for connection, or the like can be used. In the bonding process of the bonding wire, the tip of the wire is heated and melted by arc heat, and a ball (FAB: Free Air Ball) is formed by using surface tension, and the ball is crimped and bonded in the range of 150 to 300°C. On the electr...
Claims
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IPC IPC(8): H01L21/60
CPCH01L2224/45565H01L24/45H01L2224/45147H01L2224/45572H01L2224/45644H01L2224/45664H01L2224/45573H01L2924/186H01L2224/04042H01L2224/05624H01L23/296H01L2924/3651H01L24/05H01L2224/48824H01L24/43H01L2224/43825H01L2224/4321H01L2224/43125H01L2224/48465H01L2224/48839H01L2224/85439H01L2224/48247H01L24/48H01L23/49H01L23/29C22C9/00H01L23/48H01B1/026C22C5/02C22C5/04H01L2924/00014H01L2924/01028H01L2924/01045H01L2924/01077H01L2924/01046H01L2924/01003H01L2924/01051H01L2924/01026H01L2924/01024H01L2924/01027H01L2924/0103H01L2924/0102H01L2924/01012H01L2924/01078H01L2924/01021H01L2924/01039H01L2924/01064H01L2924/01013H01L2924/01031H01L2924/01032H01L2924/01049H01L2924/01033H01L2924/01052H01L2924/0105H01L2924/01083H01L2924/01034H01L2924/01005H01L2924/01015H01L2924/01057H01L2224/45647H01L2924/01016H01L2924/0665H01L2924/0715H01L2924/01014H01L2924/01029H01L2224/43848H01L2224/45123H01L2224/45144H01L2224/45155H01L2224/45164H01L2224/45173H01L2224/45178
Inventor 小田大造山田隆江藤基稀榛原照男宇野智裕
Owner NIPPON STEEL CHEMICAL CO LTD