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Bonding wire

A bonding wire and core wire technology, applied in the field of bonding wire, can solve problems such as surface defects of wires and axial eccentricity

Pending Publication Date: 2021-10-26
NIPPON STEEL CHEMICAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to this wear powder, the surface of the wire drawn after it is flawed, or there are problems such as axial eccentricity

Method used

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  • Bonding wire

Examples

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Effect test

Embodiment

[0056] As the raw material of the bonding wire, materials having a purity of 99.99% by mass or higher were prepared as Al used for the core wire, and Au and Ag used for the coating layer. An ingot is cast by heating and melting Al, and a coating layer is formed on the surface of the wire by an electrolytic plating method. Thereafter, wire drawing was performed, and heat treatment during wire drawing and tempering heat treatment after wire drawing were performed to produce bonding wires with the final wire diameters shown in Table 1, and the coating layer was controlled to the thickness described in the examples.

[0057] Regarding the heat treatment in wire drawing, the heat treatment is carried out at the stage where the wire diameter is 800 μm. In the example of the present invention, 620° C., 3 hours, and rapid cooling (water cooling) are set. In Comparative Examples 1 to 4, the cooling condition is set to slow. For cooling (air cooling), in Comparative Examples 5 and 6, no...

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Abstract

Provided is a metal-coated Al bonding wire with which sufficient bond reliability can be obtained at bonding wire bond portions in high temperature states at which a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire is characterized in that: the bonding wire comprises a core wire that is formed from Al or an Al alloy, and a coating layer that is formed in the periphery of the core wire and formed from Ag, Au or an alloy containing Ag and Au; and a crystal orientation <111> angled at 15 degrees or less with respect to the longitudinal direction of the wire makes up a proportion of 30-90% of crystal orientations in a core material cross section in the direction perpendicular to the wire axis. The surface roughness of the wire is preferably 2[mu]m or less in terms of Rz.

Description

technical field [0001] The present invention relates to a bonding wire, and particularly to a metal-coated Al bonding wire having a coating layer on the surface of an Al core wire. Background technique [0002] In a semiconductor device, electrodes formed on a semiconductor element and electrodes on a lead frame or a substrate are connected by bonding wires. As materials used for bonding wires, gold (Au) or copper (Cu) is used in integrated circuit semiconductor devices such as super LSI, while aluminum (Al) is mainly used in power semiconductor devices. For example, Patent Document 1 shows the use of An example of an aluminum bonding wire (hereinafter referred to as "Al bonding wire"). In addition, in a power semiconductor device using an Al bonding wire, wedge bonding is used as a bonding method for connection to an electrode on a semiconductor element and connection to an electrode on a lead frame or a substrate. [0003] Al bonding wires are cheaper than Au bonding w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2224/45124H01L2224/45565H01L2224/45639H01L2224/45644C22C21/00B32B15/017B32B15/018C21D9/525C22F1/04B23K35/0227B23K35/286H01L24/45B21C37/042B21C1/003H01L2224/45015H01L2924/10272H01L24/43H01L2224/4321H01L2224/43848C23C18/42C23C18/1689C25D5/50C25D7/0607C21D8/06C21D2251/00H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/01026H01L2924/01014H01L2924/01204H01L2924/00014
Inventor 山田隆西林景仁榛原照男小田大造江藤基稀小山田哲哉小林孝之宇野智裕
Owner NIPPON STEEL CHEMICAL CO LTD