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A kind of preparation method of cobalt tantalum zirconium target

A technology of target material and target blank, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of cumbersome process, inability to guarantee high-purity cobalt-tantalum-zirconium alloy target material, and unfavorable for mass production. , to achieve the effect of solving the bottom of purity

Active Publication Date: 2022-07-01
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above production methods cannot guarantee the preparation of high-purity cobalt-tantalum-zirconium alloy targets, nor can they guarantee uniform grain size distribution of cobalt-tantalum-zirconium alloy targets, and the process is cumbersome, which is not conducive to mass production

Method used

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preparation example Construction

[0020] The present invention provides a preparation method of a cobalt tantalum zirconium target, the preparation method comprising the following steps:

[0021] (1) Mixing: Weigh the Co, Zr and Ta raw materials according to the required ratio of the target material, and put the raw materials into the water-cooled crucible of the magnetic levitation induction melting furnace to obtain the mixed material.

[0022] In this embodiment, Co sheets, Ta sheets and Zr particles with a purity greater than 4N are selected as raw materials, the raw materials of Co, Zr and Ta are weighed according to the required ratio of the target material, and the raw materials are loaded into the water-cooled copper crucible of the magnetic levitation induction melting furnace. Inside, a mixed material was obtained.

[0023] (2) Smelting: The alloy ingot is obtained after smelting the mixed material.

[0024] In this embodiment, after the water-cooled copper crucible is evacuated to a vacuum, it is f...

Embodiment 1

[0035] (1) Mixing: Weigh 10.532Kg of Co, 1.59Kg of Ta and 0.771Kg of Zr raw materials according to the required ratio of the target material, and put the raw materials into the water-cooled copper crucible of the magnetic levitation melting furnace to obtain the mixed material.

[0036] (2) Smelting: vacuumize the water-cooled copper crucible to 2.0×10 -2After Pa, the furnace is filled with argon gas to wash, and after vacuuming again, new argon gas is filled as gas protection, and the pressure in the melting furnace is kept at 0.06MPa. The mixture was heated to 1300°C in a vacuum environment. At this time, the mixture was slowly melted. After smelting for 12 minutes, the temperature was raised to 1500°C. After the mixture was completely melted, the alloy ingot was obtained after cooling to room temperature.

[0037] (3) Refining: take out the alloy ingot and place it in the vacuum induction melting furnace, and evacuate the vacuum melting furnace to 2.0×10 -2 After Pa, fill ...

Embodiment 2

[0042] (1) Mixing materials: Weigh 13.619Kg of Co, 6.445Kg of Ta and 1.645Kg of Zr raw materials according to the required ratio of the target material, and put the raw materials into the water-cooled copper crucible of the magnetic levitation melting furnace to obtain the mixed material.

[0043] (2) Smelting: vacuumize the water-cooled copper crucible to 2.0×10 -2 After Pa, the furnace is filled with argon gas to wash, and after vacuuming again, new argon gas is filled as gas protection, and the pressure in the melting furnace is kept at 0.09MPa. The mixture was heated to 1375°C in a vacuum environment. At this time, the mixture was slowly melted. After smelting for 10 minutes, the temperature was raised to 1500°C. After the mixture was completely melted, the alloy ingot was obtained after cooling to room temperature.

[0044] (3) Refining: The alloy ingot is taken out and placed in a vacuum induction melting furnace, and the vacuum induction melting is evacuated to 2.0×10 ...

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Abstract

The invention discloses a preparation method of a cobalt, tantalum, and zirconium target material, which comprises the following steps: weighing Co, Zr and Ta raw materials according to the required ratio of the target material, and loading the raw materials into a water-cooled crucible of a magnetic levitation induction melting furnace to obtain mixed material; smelting the mixed material to obtain an alloy ingot; refining the alloy ingot to obtain an alloy melt; casting the alloy melt to obtain an ingot; hot rolling the ingot to obtain a target blank; The target is obtained after machining. The present invention provides a method for preparing a cobalt-tantalum-zirconium target material, which is prepared by combining two different methods of smelting and refining to prepare a cobalt-tantalum-zirconium alloy target material, which can effectively solve the problem of low purity and crystallinity of the cobalt-tantalum-zirconium alloy target material prepared in the prior art. The technical problems of uneven particle size distribution and complex process.

Description

technical field [0001] The invention relates to the technical field of target preparation, in particular to a preparation method of a cobalt tantalum zirconium target. Background technique [0002] As one of the three basic components of electronic circuits, inductors are widely used in various electronic fields such as computers, consumer electronics, communication equipment, etc. Chip inductors can be divided into three types: laminated inductors, wound inductors and thin film inductors. [0003] Due to the introduction of magnetic films, thin-film inductors can not only effectively improve the inductance, but also effectively improve the high-frequency performance of the inductor. The charter will become the mainstream of future inductors. With the increasing requirements of consumers for digital products such as mobile phones and the intensified competition in the mobile phone industry, the demand for inductive devices in domestic and foreign markets has rapidly increa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22C1/02C22C19/07
CPCC23C14/3414C22C1/02C22C19/07
Inventor 蔡新志童培云朱刘何坤鹏黄宇彬邓瑞钟振宇
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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