Quantum dot semiconductor optical amplifier and its preparation method

Abstract

The application discloses a quantum dot semiconductor optical amplifier and a preparation method thereof, belonging to the technical field of optical devices. In this application, since the positions of the multiple localized etching holes on the pre-etching layer are fixed, from the bottom of the localized etching holes, along the axially extending nanowires of the localized etching holes The position is also fixed. In this way, when the quantum dots are grown with the nanowire as a carrier, the degree of freedom of growth of the quantum dots is limited, so that the position of the quantum dots is fixed and the size is controllable. Since the position of the quantum dots is fixed and the size is controllable, it is avoided that the quantum dots at the same height in the active section of multiple nanowires form a two-dimensional flat layer. Moreover, it also effectively avoids the problem of large fluctuations in the alloy composition caused by the random size of each quantum dot, thereby reducing the wavelength dependence of the device, reasonably adjusting the width of the covered band, and reducing the noise index.

Description

technical field [0001] The present application relates to the technical field of optical devices, in particular to a quantum dot semiconductor optical amplifier and a preparation method thereof. Background technique [0002] Quantum dot semiconductor optical amplifier (QD-SOA) has the advantages of electric drive, compact package, easy deployment and low price, and is currently a promising optical amplifier device. [0003] figure 1 It is a structural schematic diagram of a quantum dot semiconductor optical amplifier provided in the related art. Such as figure 1 As shown, the QD-SOA includes a substrate, a buffer layer above the substrate, and an n-type layer, an active gain layer, and a p-type layer obtained by sequential epitaxial growth from the buffer layer. Wherein, the active gain layer includes a plurality of two-dimensional parasitic planes, and each time a two-dimensional parasitic plane is generated, the two-dimensional parasitic plane is used as a carrier to pe...

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Problems solved by technology

[0005] This application provides a quantum dot semiconductor optical amplifier and its preparation method, which can solve the performance problems of the quantum dot semiconductor optical amplifier in the related art, such as large wavelength dependence, too wide a covered band, and a large noise index.

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