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A kind of αsi oxide box-shaped silicon nitride waveguide manufacturing method

A manufacturing method and technology of silicon nitride, applied in the field of integrated optics, can solve the problems of reducing process links and low verticality, and achieve the effects of reducing process links, improving smoothness and reducing absorption loss

Active Publication Date: 2022-02-22
GUIYANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, the object of the present invention is to provide a method for manufacturing an αSi oxide BOX-shaped silicon nitride waveguide. The method forms αSi rectangular grooves by using photoetching or ion beam etching of the αSi material layer, which can solve the problem of direct engraving in traditional processes. Corrosion dielectric material leads to SiO 2 For the problem of low verticality, the present invention only needs two times of growth of silicon nitride material and two times of photoetching to prepare the BOX waveguide through the αSi rectangular groove, which reduces the process links and saves the production cost

Method used

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Embodiment 1

[0023] This embodiment proposes a method for manufacturing an αSi oxidized BOX-shaped silicon nitride waveguide, which includes the following steps:

[0024] Step 1: Form 2.5 μm SiO on the silicon substrate by thermal oxidation process 2 For the cladding layer, the thermal oxidation temperature is controlled at 1100°C, and the thermal oxidation temperature and time are 38 minutes, and then a 400nm αSi material layer is grown on the silicon-based substrate by the low-temperature plasma-enhanced chemical vapor deposition method;

[0025] Step 2: First form a 4 μm photoresist on the αSi material layer, and then use photolithography to form an αSi rectangular groove with the same size as the BOX-shaped waveguide on the αSi material layer. The etching width ratio of the αSi rectangular groove is controlled To be 0.75 times larger than the design size, the etching height ratio of the αSi rectangular groove is controlled to be 0.75 times smaller than the design size;

[0026] Step 3...

Embodiment 2

[0032] This embodiment proposes a method for manufacturing an αSi oxidized BOX-shaped silicon nitride waveguide, which includes the following steps:

[0033] Step 1: Form 2.5 μm SiO on the silicon substrate by thermal oxidation process 2 For the cladding layer, the thermal oxidation temperature is controlled at 1100°C, and the thermal oxidation temperature and time are 38 minutes, and then a 400nm αSi material layer is grown on the silicon-based substrate by the low-temperature plasma-enhanced chemical vapor deposition method;

[0034] Step 2: First form a 4 μm photoresist on the αSi material layer, and then use ion beam etching to form an αSi rectangular groove with the same size as the BOX-shaped waveguide on the αSi material layer. The etched width of the αSi rectangular groove is larger than It is controlled to be 0.75 times larger than the design size, and the etching height ratio of the αSi rectangular groove is controlled to be 0.75 times smaller than the design size; ...

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Abstract

The invention discloses a method for manufacturing an αSi oxidized BOX-shaped silicon nitride waveguide, which comprises the following steps: forming SiO on a silicon-based substrate by a thermal oxidation process 2 Wrapping layer, and then growing αSi material; etching αSi rectangular groove; roughening the surface of the BOX-shaped waveguide side wall on the αSi material layer; oxidizing the αSi rectangular groove into silicon dioxide, then filling the αSi rectangular groove, and grinding off the excess Si 3 N 4 and SiO 2 Material; regrowth Si 3 N 4 layer, remove excess silicon nitride material, and grow waveguides wrapped in SiO 2 layer; the present invention forms αSi rectangular grooves by using photoetching or ion beam etching αSi material layers, which can solve the problem of SiO caused by direct etching of dielectric materials in traditional processes 2 For the problem of low verticality, the present invention only needs two times of growth of silicon nitride material and two times of photoetching to prepare the BOX waveguide through the αSi rectangular groove, which reduces the process steps and saves the production cost.

Description

technical field [0001] The invention relates to the technical field of integrated optics, in particular to a method for manufacturing an αSi oxidized BOX-shaped silicon nitride waveguide. Background technique [0002] Silicon nitride, a silicon-based material, is widely used in integrated optoelectronic devices. It has a wide transmission spectrum from visible to infrared, and its fabrication process is compatible with commercial semiconductor processing processes. The optical waveguide structure based on silicon nitride material has the advantages of moderate refractive index difference with the cladding layer, device size on the order of microns, large manufacturing tolerance, and easy large-scale commercial production. Higher coupling efficiency and lower transmission loss; [0003] In the existing BOX-shaped silicon nitride wave manufacturing process, the dielectric material is directly etched in the process of forming the BOX waveguide growth groove, resulting in SiO ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/136G02B6/13
CPCG02B6/136G02B6/13G02B2006/12166
Inventor 周章渝肖寒孙健代天军陈雨青彭晓珊王代强张青竹宁江华张子砚
Owner GUIYANG UNIV
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