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A lateral high-voltage device that reduces the impact of high-voltage interconnects

A lateral high-voltage, high-voltage technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as the difficulty of completely depleting the drift region and device breakdown, and achieve the effect of optimizing the surface electric field distribution and increasing the breakdown voltage

Active Publication Date: 2021-08-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention aims at that in the high-voltage interconnection circuit, when the high-voltage interconnection line crosses the surface of the lateral device, the electric field lines are too concentrated in the local area of ​​the device, and induced charges are generated on the device surface, making it difficult to completely deplete the drift region, causing the device to occur in advance breakdown problem, providing a lateral high-voltage device that reduces the impact of high-voltage interconnections

Method used

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  • A lateral high-voltage device that reduces the impact of high-voltage interconnects
  • A lateral high-voltage device that reduces the impact of high-voltage interconnects
  • A lateral high-voltage device that reduces the impact of high-voltage interconnects

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Embodiment Construction

[0018] Such as figure 1 As shown, the device structure mainly includes two parts: along the figure 1 The structure of the non-high-voltage interconnection region of the middle AB line section and the figure 1 High-voltage interconnection area structure in AC line section;

[0019] The non-high-voltage interconnection region structure includes a second-type impurity-doped substrate 8, an insulating buried layer 7 formed on the second-type impurity-doped substrate 8, and a first-type impurity-doped epitaxial layer formed on the insulating buried layer 7. 5. On the left side of the first-type doped impurity epitaxial layer 5, a second-type doped impurity well region 3 is formed by ion implantation, and the first-type doped surface heavily doped inside the second-type doped impurity well region 3 is placed. The impurity contact region 1 and the second-type doped impurity contact region 2 adjacent to the first-type doped impurity contact region 1 are formed by ion implantation on...

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Abstract

The invention provides a lateral high-voltage device that reduces the influence of high-voltage interconnection, including a first-type doped impurity contact region, a second-type doped impurity contact region, a first-type doped impurity well region, and a second-type doped impurity well region, first-type doped impurity epitaxial layer, first-type doped impurity drift region, insulating buried layer, second-type doped impurity substrate, source electrode, gate electrode, drain electrode, gate oxide layer, silicon local oxidation isolation The oxide layer and the drift region of the high-voltage interconnection region of the device are set to linear variable doping, which reduces the influence of the high-voltage interconnection line on the surface electric field of the device and improves the breakdown voltage of the device.

Description

technical field [0001] The invention belongs to the field of semiconductor power devices, and in particular relates to a lateral high-voltage device that reduces the influence of high-voltage interconnection. Background technique [0002] The style of device design is mostly runway type, which is mainly divided into two parts: the high-voltage interconnection area and the non-high-voltage interconnection area. regional structure. When a high-voltage interconnect line crosses the drift region of a high-voltage device such as a lateral double-diffused metal-oxide-semiconductor field-effect transistor LDMOS (LateralDouble-Diffused MOSFET), it will cause the electric field lines to be too concentrated somewhere on the surface of the device, thereby causing the device to advance Breakdown occurs and the expected withstand voltage value cannot be achieved. Therefore, it is of great significance to study a lateral high-voltage device that reduces the influence of high-voltage int...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/36H01L29/78
CPCH01L29/0615H01L29/0649H01L29/36H01L29/7823H01L29/7824
Inventor 周锌师锐鑫乔明张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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