Thin film transistor

A thin film transistor and semiconductor technology, applied in the field of OLED display, can solve the problems of thin film transistor losing switching efficiency, thin film transistor losing switching function, etc.

Inactive Publication Date: 2020-08-11
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In existing thin-film transistors, when the passivation protection layer of silicon nitride material is formed by a strong hydrogen injection process, the hydrogen will reach the active layer below through the passivation layer and the etching barrier layer, and the active layer in the channel region will become into a conductor region, the thin film transistor loses the function of switching, therefore, there is a technical problem that the thin film transistor loses the switching effect of the existing thin film transistor

Method used

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0025] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the pr...

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Abstract

A thin film transistor provided by the invention comprises an active layer, an etching barrier layer, a source electrode and a drain electrode which are arranged in a stacked mode, the active layer comprises a channel region and a contact region, the channel region comprises a first semiconductor region and a second semiconductor region, the source electrode covers the first semiconductor region,and the drain electrode covers the second semiconductor region; and through blocking of the source electrode and the drain electrode, the switching effect of the thin film transistor is ensured.

Description

technical field [0001] The invention relates to the technical field of OLED display, in particular to a thin film transistor. Background technique [0002] In the existing thin film transistors, when the passivation protection layer of silicon nitride material is formed by using a strong hydrogen injection process, the hydrogen will reach the active layer below through the passivation layer and the etch barrier layer, and the active layer in the channel region becomes If it becomes a conductor region, the thin film transistor loses the switching function. Therefore, the existing thin film transistor has a technical problem that the thin film transistor loses the switching function. Contents of the invention [0003] An embodiment of the present invention provides a thin film transistor, which can alleviate the technical problem of the existing thin film transistor that the thin film transistor loses the switching function. [0004] An embodiment of the present invention p...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/06H01L27/32
CPCH01L29/78606H01L29/0642H01L29/7869H10K59/1213
Inventor 李恭檀
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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