Three-dimensional reconstruction method and device
A 3D reconstruction and algorithm technology, applied in measurement devices, 3D modeling, image analysis, etc., can solve the problems of inaccurate relationship between electron beam imaging intensity and structure function, slow change of surface height, and difficult 3D topography of device structure.
Pending Publication Date: 2020-08-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0003] Generally speaking, the device structure can be divided into continuous gradient structure and vertical edge structure. In the continuous gradient structure, the height of the surface changes slowly, so the functional relationship between the electron beam imaging intensity and the structure can be better reconstructed. The three-dimensional shape of the device structure can be obtained, but the height of the vertical edge structure changes rapidly at a certain position. At this time, the functional relationship between the electron beam imaging intensity and the structure is not accurate enough, so it is difficult to obtain the three-dimensional shape of the device structure.
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[0040] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0041] In the field of integrated circuits, the three-dimensional shape of the device can be obtained by using three-dimensional reconstruction technology. Specifically, the electron beam microscope equipment can be used to scan the device structure to obtain the imaging intensity of the electron beam at different positions, and then use the three-dimensional recons...
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The embodiment of the invention provides a three-dimensional reconstruction method and device. An electron beam scanning device can be used for scanning a to-be-measured structure to obtain an electron beam image; an electron beam imaging model is used to obtain the model parameters corresponding to the electron beam image through fitting, and the model parameters can reflect the three-dimensionalcharacteristics of the to-be-measured structure, i.e., the electron beam image can be processed to obtain the three-dimensional characteristics of the to-be-measured structure, so that the three-dimensional reconstruction of the to-be-measured structure can be carried out by utilizing the model parameters reflecting the three-dimensional characteristics of the to-be-measured structure. The electron beam imaging model can be used for fitting the electron beam image; the method depends on the corresponding relation between the model parameters and the image information, is not affected by the edge angles, can be suitable for the three-dimensional reconstruction of the to-be-measured structure at each edge angle, improves the accuracy of the three-dimensional reconstruction of the to-be-measured structure at the high edge angle, and improves the accuracy of the monitoring of the process quality.
Description
technical field [0001] The present application relates to the field of integrated circuits, in particular to a three-dimensional reconstruction method and device. Background technique [0002] In the field of integrated circuits, the three-dimensional shape of the device can reflect the process quality and structural characteristics of the device. How to obtain the three-dimensional shape of the device is an important issue. At present, electron beam microscopy equipment can be used to scan the device structure to obtain the electron beam imaging intensity at different positions, and then use three-dimensional reconstruction technology to analyze the electron beam imaging intensity to obtain the three-dimensional shape of the device structure. [0003] Generally speaking, the device structure can be divided into continuous gradient structure and vertical edge structure. In the continuous gradient structure, the height of the surface changes slowly, so the functional relation...
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Login to View More IPC IPC(8): G06T17/00G06T7/13G01B15/04
CPCG06T17/00G06T7/13G01B15/04
Inventor 张利斌韦亚一马乐高澎铮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI