An etchant composition for silver thin film and an ehting method and a mehtod for fabrication metal pattern using the same

Abstract

The present invention provides an etchant composition for a silver thin film, an etching method, and a method for forming a metal pattern, the etchant composition for the silver thin film comprising,relative to the total weight of the composition: (A) 0.1-20 wt% of a silver oxidizing agent; (B) 0.1-20 wt% of an inorganic acid; (C) 0.01-10 wt% of a compound represented by the following Chemical Formula 1; and (D) 50-99 wt% of water, wherein in the above Chemical Formula 1, R1 is an aliphatic hydrocarbon group having 1-3 carbon atoms, and R2 is a hydrogen atom or an aliphatic hydrocarbon grouphaving 1-3 carbon atoms. The etchant composition for the silver thin film of the present invention provides an effect of significantly improving the problems of silver residue and silver re-adsorption, the phenomenon of wiring thinning, and the problem of generation of precipitates.

Description

technical field [0001] The present invention relates to a silver thin film etchant composition, an etching method using the same, and a method for forming a metal pattern. Background technique [0002] With the advent of the information age, the field of displays that process and display a large amount of information has rapidly developed, and accordingly, various flat panel displays have been developed and attracted attention. [0003] Examples of such flat panel display devices include liquid crystal display devices (Liquid crystal display device: LCD), plasma display devices (Plasma Display Panel device: PDP), field emission display devices (Field Emission Display device: FED), electric Electroluminescence Display device (ELD) and Organic Light Emitting Diodes (OLED), etc., such flat-panel display devices are widely used in home appliances such as televisions and video recorders, as well as computers such as notebooks and mobile phones. I use it for various purposes. Th...

AI Technical Summary

Problems solved by technology

In order to solve these problems, a non-phosphoric acid silver etchant composition mainly using hydrogen peroxide or an iron compound (Ferric compound) etc. instead of phosphoric acid as a silver oxidizing agent has been developed. The catalytic reaction of the etchant penetrating the ITO pinhole (pinhole) in the upper part of the ITO/Ag/ITO film makes the silver etching locally faster, which becomes the cause of thinning of the wiring.

If the wiring is partially thinned due to the thinning of the wiring, there is a problem that not only the resistance will increase, making it dif

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