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Embedded word line structure

A buried word line and isolation structure technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of buried word line offset, leakage current, etc., so as to increase the overlap margin and prevent leakage. effect of current

Active Publication Date: 2020-10-09
WINBOND ELECTRONICS CORP
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  • Claims
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AI Technical Summary

Problems solved by technology

However, when the buried word line is shifted, the buried word line that should be located in the isolation structure will be shifted to the outside of the isolation structure, and a gap between the buried word line and the active region will be generated. leakage current

Method used

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Embodiment Construction

[0030] Figure 1A to Figure 1K It is a top view of the manufacturing process of the buried word line structure according to an embodiment of the present invention. Figure 2A to Figure 2K for along Figure 1A to Figure 1K Sectional view of the I-I' section line in . exist Figure 1A to Figure 1K in, omit Figure 2A to Figure 2K Part of the components in order to clearly describe the configuration relationship of the remaining components with respect to the isolation structure and the active region. For example, in Figure 1A in, omit Figure 2A The mask layer 104 , the mask layer 106 , the mask layer 108 and the mask layer 110 in FIG.

[0031] Please refer to Figure 1A and Figure 2A , an isolation structure 102 is formed in the substrate 100 to define a plurality of active regions AA separated from each other. The substrate 100 may be a semiconductor substrate, such as a silicon substrate. The isolation structure 102 is, for example, a shallow trench isolation (STI). ...

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Abstract

The invention provides an embedded word line structure. The embedded word line structure comprises a substrate, an isolation structure and an embedded word line, wherein the isolation structure is located in the substrate and defines a plurality of active regions separated from each other. An active region extends in a first direction. An embedded word line is located in the substrate. The embedded word line extends in the second direction through the isolation structure and the active region. The first direction is intersected with the second direction. The embedded word line and the substrate are isolated from each other. The same embedded word line comprises a first part and a second part. The first part is located in the active region. The second part is located in the isolation structure between two adjacent active regions in the first direction. The first part is wider than the second part. The embedded word line structure can effectively prevent leakage current from being generated between the embedded word line and the active region.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a buried word line structure. Background technique [0002] Generally, the buried word lines extend through active regions and isolation structures. However, when the buried word line is shifted, the buried word line that should be located in the isolation structure will be shifted to the outside of the isolation structure, and a gap between the buried word line and the active region will be generated. leakage current. Contents of the invention [0003] The invention provides a buried word line structure, which can effectively prevent leakage current between the buried word line and the active area. [0004] The present invention proposes a buried word line structure, including a substrate, an isolation structure and a buried word line. The isolation structure is located in the substrate to define a plurality of active regions separated from each other. The active area extends i...

Claims

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Application Information

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IPC IPC(8): H01L23/552H01L21/768
CPCH01L21/768H01L23/552
Inventor 陈皇男许明智
Owner WINBOND ELECTRONICS CORP
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