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Buried word line structure

A technology of embedded word line and isolation structure, which is applied in the direction of semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems of embedded word line offset and leakage current, and increase the overlapping margin degree, the effect of preventing leakage current

Active Publication Date: 2021-10-22
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the buried word line is shifted, the buried word line that should be located in the isolation structure will be shifted to the outside of the isolation structure, and a gap between the buried word line and the active region will be generated. leakage current

Method used

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  • Buried word line structure
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Examples

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Embodiment Construction

[0030] Figure 1A to Figure 1K It is a top view of the manufacturing process of the buried word line structure according to an embodiment of the present invention. Figure 2A to Figure 2K for along Figure 1A to Figure 1K Sectional view of the I-I' section line in . exist Figure 1A to Figure 1K in, omit Figure 2A to Figure 2K Part of the components in order to clearly describe the configuration relationship of the remaining components with respect to the isolation structure and the active region. For example, in Figure 1A in, omit Figure 2A The mask layer 104 , the mask layer 106 , the mask layer 108 and the mask layer 110 in FIG.

[0031] Please refer to Figure 1A and Figure 2A , an isolation structure 102 is formed in the substrate 100 to define a plurality of active regions AA separated from each other. The substrate 100 may be a semiconductor substrate, such as a silicon substrate. The isolation structure 102 is, for example, a shallow trench isolation (STI). ...

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Abstract

The invention provides an embedded word line structure, which includes a substrate, an isolation structure and an embedded word line. The isolation structure is located in the substrate to define a plurality of active regions separated from each other. The active area extends in a first direction. Buried word lines are located in the substrate. The buried word line extends through the isolation structure and the active region in the second direction. The first direction intersects the second direction. The buried word lines are isolated from the substrate. The same buried word line includes a first part and a second part. The first part is located in the active zone. The second part is located in the isolation structure between two adjacent active regions in the first direction. The width of the first section is greater than the width of the second section. The above buried word line structure can effectively prevent leakage current between the buried word line and the active region.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a buried word line structure. Background technique [0002] Generally, the buried word lines extend through active regions and isolation structures. However, when the buried word line is shifted, the buried word line that should be located in the isolation structure will be shifted to the outside of the isolation structure, and a gap between the buried word line and the active region will be generated. leakage current. Contents of the invention [0003] The invention provides a buried word line structure, which can effectively prevent leakage current between the buried word line and the active region. [0004] The present invention proposes a buried word line structure, including a substrate, an isolation structure and a buried word line. The isolation structure is located in the substrate to define a plurality of active regions separated from each other. The active area extends...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/552H01L21/768
CPCH01L21/768H01L23/552
Inventor 陈皇男许明智
Owner WINBOND ELECTRONICS CORP
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