Interconnection structure and manufacturing method thereof
A manufacturing method and interconnection technology, which are used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to prevent circuit bridging defects and increase overlap margins
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[0027] Figure 1A to Figure 1D It is a cross-sectional view of the manufacturing process of the interconnection structure according to an embodiment of the present invention.
[0028] First, please refer to Figure 1A , forming a dielectric layer 102 on the substrate 100 , wherein the dielectric layer 102 has an opening 104 . The substrate 100 can be a single-layer substrate or a multi-layer substrate, and other film layers (not shown) or semiconductor devices (not shown) can be formed thereon. The material of the dielectric layer 102 is, for example, silicon oxide. The method for forming the dielectric layer 102 is, for example, chemical vapor deposition. The opening 104 is, for example, a contact hole, a via hole or a trench. A method for forming the opening 104 is, for example, performing a patterning process on the dielectric layer 102 .
[0029] Next, please refer to Figure 1B , the barrier layer 106 can be optionally formed on the surface of the opening 104 . The ...
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