Artificial synaptic device based on skyrmion

A synaptic device and artificial technology, applied in the field of artificial synaptic devices, can solve problems such as low speed, high energy consumption, and low density, and achieve the effects of high speed, low energy consumption, and high density

Active Publication Date: 2020-10-16
BEIHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing artificial synapse devices based on standard CMOS cir...

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  • Artificial synaptic device based on skyrmion
  • Artificial synaptic device based on skyrmion
  • Artificial synaptic device based on skyrmion

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Embodiment Construction

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0036] The detailed features and advantages of the present invention are described in detail below in the embodiments, the content of which is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the content disclosed in this specification, claims a...

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Abstract

The invention provides an artificial synaptic device based on skyrmion. The artificial synaptic device comprises a bottom electrode layer, a heavy metal layer, a skyrmion layer, a tunneling barrier layer, a reference layer and a top electrode layer which are sequentially arranged from bottom to top, wherein the bottom surfaces of the bottom electrode layer, the heavy metal layer and the skyrmion layer are all circular, the diameter of the bottom surfaces is a first diameter, the bottom surfaces of the tunneling barrier layer, the reference layer and the top electrode layer are all circular, the diameter of the bottom surfaces is a second diameter, and the first diameter is greater than the second diameter. As the skyrmion has topological discontinuity in energy, the skyrmion has higher stability and lower system power consumption and area, and the skyrmion has the characteristics of being easy to move and not influenced by lattice pinning, so the artificial synaptic device based on theskyrmion is higher in speed, low in energy consumption and high in density.

Description

technical field [0001] The invention relates to the technical field of spin electronics, in particular to an artificial synapse device based on skyrmions. Background technique [0002] Brain-like computing (artificial neural network) is inspired by the computing method of the biological brain, which can realize ultra-low power consumption computing and has a wide range of applications. Artificial synaptic devices are the basic hardware for brain-like computing, which originated from the imitation of the characteristics of biological synapses. Neurons in the central nervous system are interconnected in the form of synapses to form a neuron network. All pre-cells transmit information about their own excitatory state to the cells through synapses. The information transmitted by synapses is divided into two types, one is excitatory and the other is inhibitory. Their effects on nerve cells are respectively potential increase and decrease in potential. The transmission ability o...

Claims

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Application Information

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IPC IPC(8): H01L43/06H01L43/08H01L43/04H01L43/10G11C11/16
CPCG11C11/161H10N52/80H10N52/101H10N50/85H10N50/10Y02D10/00
Inventor 康旺李赛潘彪杜奥赵巍胜
Owner BEIHANG UNIV
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