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Built-in parameter configuration method of nonvolatile memory

A parameter configuration method and non-volatile memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as memory chip parameter configuration cannot be completed normally, product yield rate is low, memory chip reliability is low, etc.

Inactive Publication Date: 2020-10-27
珠海博雅科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If during the production process, the storage unit storing these built-in parameters is defective, the parameter configuration of the memory chip will not be completed normally, and the storage unit storing these built-in parameters of the memory chip will inevitably have defects. The reliability of the configured memory chip is low, and the product yield rate is low

Method used

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  • Built-in parameter configuration method of nonvolatile memory

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Embodiment Construction

[0020] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0021] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0022] figure 1 A block diagram of a power-on reading system showing a method for configuring built-in parameters of a non-volatile memory according to an embodiment of the present invention. As shown in the figure, the power-on reading system of the non-volatile memory built-in parameter configuration method of the embodiment of the present invention includes a control module 10, an address module 11, a configuration parameter storage cell array 12, a read operation module 13, a calculation and ...

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Abstract

The invention discloses a built-in parameter configuration method of a nonvolatile memory. According to the method, each word of a configuration parameter is stored by adopting a plurality of storageunits of a configuration parameter storage unit; when the configuration parameters are read, the storage data of the plurality of storage units corresponding to each word of the configuration parameters are obtained, the real storage data of the plurality of storage units are determined according to the quantity of the data 1, the words of the corresponding configuration parameters are further determined, and the parameters are enabled to take effect after all the configuration parameters are circularly read in this way. According to the built-in parameter configuration method of the nonvolatile memory, under the condition that the memory cells of the configuration parameter memory cell array have a small number of defective memory cells, the configuration parameters can still be correctlyread, correct parameter configuration is carried out, and the product yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a method for configuring built-in parameters of a nonvolatile memory. Background technique [0002] When the memory chip is powered on, some internal configuration parameters need to be read from the storage unit to the configuration register to complete the parameter setting function of the memory chip. If during the production process, the storage unit storing these built-in parameters is defective, the parameter configuration of the memory chip will not be completed normally, and the storage unit storing these built-in parameters of the memory chip will inevitably have defects. The reliability of the configured memory chip is low, and the yield rate of the product is low. Contents of the invention [0003] In view of the above problems, the object of the present invention is to provide a method for configuring built-in parameters of a non-volatile memory, there...

Claims

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Application Information

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IPC IPC(8): G11C7/20
CPCG11C7/20
Inventor 安友伟张登军刘大海李迪逯钊琦
Owner 珠海博雅科技股份有限公司
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