Circuit structure and preparation method thereof
A technology of circuit structure and metal circuit layer, which is used in circuits, semiconductor/solid-state device manufacturing, electrical components, etc.
Inactive Publication Date: 2020-10-27
NANCHANG O FILM DISPLAY TECH CO LTD
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Problems solved by technology
[0003] Based on this, it is necessary to provide a circuit structure and its preparation method for the problem that the metal conductive circuit finally prepared cannot meet the actual demand due to the long contact period between the metal layer and the base layer.
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[0018] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0019] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected ...
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The invention relates to a circuit structure and a preparation method thereof. The circuit structure comprises a base layer, and a first metal circuit layer, a second metal circuit layer and a third metal circuit layer which are sequentially stacked on the base layer, wherein the metal activity of the first metal circuit layer and the metal activity of the third metal circuit layer are both different from the metal activity of the second metal circuit layer, and the projections of the first metal circuit layer, the second metal circuit layer and the third metal circuit layer on the base layercoincide. According to the invention, the metal conductive circuit is divided into three layers, and each layer can be set to be thin, so that when each metal layer is etched, the etching amount of the side, which is away from the base layer, of the metal layer can be prevented from being too large. Meanwhile, during each time of etching, the etching solution does not corrode other prepared metalcircuit layers, so that the problem that the finally obtained metal circuit cannot meet the normal requirement due to the fact that the etching amount of the side, which is away from the base layer, of the metal layer is too large can be effectively solved according to the method.
Description
technical field [0001] The invention relates to the technical field of conductive film materials, in particular to a circuit structure and a preparation method thereof. Background technique [0002] Metal nano-multilayer films have characteristics that traditional metal films do not have, such as special optics, mechanics, and giant elastic modulus. The metal nano-multilayer film usually includes a base layer and a metal conductive circuit arranged on the base layer. The metal conductive circuit is usually prepared by setting a corresponding metal layer on the base layer, and then setting a dry film on the surface of the metal layer away from the base layer. , and then form an etching pattern on the dry film through exposure, development, etc., and finally use an etching solution to etch away the excess part of the metal layer to form a metal conductive circuit. However, during etching, the farther the metal layer is from the base layer, the longer the contact time with the...
Claims
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IPC IPC(8): H01L21/48H01L23/498
CPCH01L21/4846H01L23/49838H01L23/49866
Inventor 王冬明何兰兰
Owner NANCHANG O FILM DISPLAY TECH CO LTD