Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure

A technology of semiconductor and gate structure, applied in the direction of semiconductor devices, semiconductor/solid-state device components, transistors, etc., can solve the problems of influence, unfavorable performance of parasitic capacitance memory devices, etc.

Active Publication Date: 2020-10-27
NAN YA TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The parasitic capacitance has an adverse effect on the performance of the memory device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The following description of the disclosure, accompanied by the accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure to which, however, the disclosure is not limited. In addition, the following embodiments can be properly integrated to complete another embodiment.

[0055] "An embodiment," "an embodiment," "an exemplary embodiment," "another embodiment," "another embodiment" and the like mean that the embodiments described in the present disclosure may include a particular feature, structure, or characteristic, however Not every embodiment must include the particular feature, structure or characteristic. Also, repeated use of the phrase "in an embodiment" does not necessarily refer to the same embodiment, but could be.

[0056] In order to make the present disclosure fully understandable, the following description provides detailed steps and structures. Obviously, the practice of the pres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor structure. The semiconductor structure includes a substrate including a surface, a first doped region and a second doped region, wherein the first doped region and the second doped region are disposed under the surface; a gate structure disposed between the first doped region and the second doped region; a capacitor disposed over and electrically connected tothe first doped region; and a bit line disposed over and electrically connected to the second doped region, wherein the bit line includes a conductive portion and an insulating portion surrounding the conductive portion, and the insulating portion includes a ferroelectric material.

Description

technical field [0001] This disclosure claims priority and the benefit of U.S. Formal Application No. 16 / 388,314, filed 2019 / 04 / 18, the contents of which are hereby incorporated by reference in their entirety. [0002] The present disclosure relates to a semiconductor structure. In particular, it relates to a bit line structure in a memory cell. Background technique [0003] For many modern applications, semiconductor devices are indispensable. Among semiconductor devices, memory devices such as dynamic random access memory (DRAM) devices have been considered to play an important role. The memory device has a lot of memory cells (memory cells), which are arranged vertically and horizontally on the substrate (substrate), wherein the formation of each memory cell can be stored by a capacitor, and can be stored by a bitline (bitline). taken, and the bit lines are extended on a surface of the substrate. [0004] With the advancement of electronic technology, the capacity of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H10B12/00
CPCH10B12/30H10B12/482H01L23/53295H01L23/53257H01L23/528H10B12/05H10B12/31
Inventor 谢承宪黄竞加丁振伦吕增富廖伟明
Owner NAN YA TECH