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Thin film transistor, preparation method thereof and display device

A thin-film transistor and patterning technology, which is applied in transistors, semiconductor/solid-state device manufacturing, and electric solid-state devices, etc., can solve the problems of low mobility, difficulty in achieving large size, and poor uniformity.

Pending Publication Date: 2020-10-30
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if low-temperature polysilicon is used as the TFT material of the active layer, there is a problem of poor uniformity and it is difficult to realize a large-sized display panel.
TFTs that use an oxide semiconductor as the material for the active layer have a problem of low mobility

Method used

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  • Thin film transistor, preparation method thereof and display device
  • Thin film transistor, preparation method thereof and display device
  • Thin film transistor, preparation method thereof and display device

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0040] The display device can be used as a mobile phone, a tablet computer, a personal digital assistant (personal digital assistant, PDA), a vehicle-mounted computer, etc. The embodiment of the present invention does not specifically limit the specific application of the display panel.

[0041] Such as figure 1 As shown, the display device may include, for example, a frame 1 , a display panel 2 , a circuit board 3 , a cover 4 , and other electronic accessories ...

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PUM

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Abstract

The embodiment of the invention provides a thin film transistor, a preparation method thereof and a display device, relates to the technical field of display, and can improve the mobility of the thinfilm transistor. The thin film transistor comprises an insulating layer arranged on a substrate, an active pattern comprising carbon nanotubes, a source electrode and a drain electrode, wherein the active pattern comprises a plurality of strip-shaped sub-patterns which extend in a first direction and are arranged at intervals; in the first direction, one end of each strip-shaped sub-pattern in theactive pattern is in contact with the source electrode, and the other end of each strip-shaped sub-pattern in the active pattern is in contact with the drain electrode; and the insulating layer comprises a plurality of strip-shaped grooves, the grooves are in one-to-one correspondence with the strip-shaped sub-patterns, and the orthographic projections of the grooves on the substrate are completely overlapped with the orthographic projections of the strip-shaped sub-patterns on the substrate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and a display device. Background technique [0002] In recent years, users' demand for high-quality display panels has gradually increased, and furthermore, the requirements for thin-film transistors (Thin-film transistor, TFT for short) have also become higher and higher. [0003] Currently, Low Temperature Poly-silicon (LTPS for short) or an oxide semiconductor is commonly used as the material of the active layer. However, if low-temperature polysilicon is used as the TFT material of the active layer, there is a problem of poor uniformity and it is difficult to realize a large-sized display panel. A TFT using an oxide semiconductor as an active layer material has a problem of low mobility. Contents of the invention [0004] Embodiments of the present invention provide a thin film transistor, a manufacturing method there...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30H01L51/40H01L27/12
CPCH01L27/1214H10K71/191H10K71/60H10K85/221H10K10/46H10K10/40H01L27/12H01L29/786
Inventor 袁广才郭康董学卢鑫泓
Owner BOE TECH GRP CO LTD