Thin film transistor, preparation method thereof and display device
A thin-film transistor, one-to-one correspondence technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of difficult to achieve large size, low mobility, poor uniformity of TFT, etc.
Pending Publication Date: 2020-10-30
BOE TECH GRP CO LTD
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Problems solved by technology
However, if low-temperature polysilicon is used as the material of the active layer, the TFT has poor uniformity and it is difficult to realize a large-sized display panel.
If an oxide semiconductor is used as the material of the active layer, TFT has the problem of low mobility
Method used
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[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0040] The display device can be used as a mobile phone, a tablet computer, a personal digital assistant (personal digital assistant, PDA), a vehicle-mounted computer, etc. The embodiment of the present invention does not specifically limit the specific application of the display panel.
[0041] Such as figure 1 As shown, the display device may include, for example, a frame 1 , a display panel 2 , a circuit board 3 , a cover 4 , and other electro...
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Abstract
The embodiment of the invention provides a thin film transistor, a preparation method thereof and a display device, relates to the technical field of display, and can improve the mobility of the thinfilm transistor. The preparation method comprises the steps of forming an adhesive material layer on a substrate, wherein the adhesive material layer comprises a plurality of strip-shaped grooves which extend in the first direction and are formed at intervals, and the grooves penetrate through the glue material layer; forming an active pattern including carbon nanotubes on the substrate, wherein the active pattern comprises a plurality of strip-shaped sub-patterns which are arranged at intervals, the strip-shaped sub-patterns are in one-to-one correspondence with the grooves, and the orthographic projections of the strip-shaped sub-patterns on the substrate are completely overlapped with the orthographic projections of the grooves corresponding to the strip-shaped sub-patterns on the substrate; removing the adhesive material layer; and forming a source electrode and a drain electrode on the substrate, wherein one end of the strip-shaped sub-pattern in the active pattern in the first direction is contacted with the source electrode, and the other end of the strip-shaped sub-pattern is contacted with the drain electrode.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and a display device. Background technique [0002] In recent years, users' demand for high-quality display panels has gradually increased, and furthermore, the requirements for thin-film transistors (Thin-film transistor, TFT for short) have also become higher and higher. [0003] Currently, Low Temperature Poly-silicon (LTPS for short) or an oxide semiconductor is commonly used as the material of the active layer. However, if low-temperature polysilicon is used as the material of the active layer, the uniformity of the TFT is poor, and it is difficult to realize a large-sized display panel. If an oxide semiconductor is used as the material of the active layer, TFT has a problem of low mobility. Contents of the invention [0004] Embodiments of the present invention provide a thin film transistor, a manufacturing method ...
Claims
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IPC IPC(8): H01L51/05H01L51/30H01L51/40H01L27/12
CPCH01L27/1214H10K71/191H10K71/60H10K85/221H10K10/46H10K10/40H01L27/12H01L29/786H01L29/43
Inventor 袁广才郭康董学
Owner BOE TECH GRP CO LTD